[1] Zhao Hongping, Tansu Nelson. Optical gain characteristics of staggered InGaN quantum wells lasers ［J］. Appl. Phys. Lett., 2010, 107: 113110.

[2] Li H, Katz S, et al. Broad gain bandwidth injectorless quantum-cascade lasers with a step well design ［J］. Appl. Phys. Lett., 2011, 98: 131113.

[3] Giacomo S, Maria A I, Milan F, et al. Step well quantum cascade laser emitting at 3 THz ［J］. Appl. Phys. Lett., 2009, 94: 041114.

[4] Machhadani H, Kotsar Y, et al. Terahertz intersubband absorption in GaN/AlGaN step quantum well ［J］. J. Appl. Phys., 2010, 97: 191101.

[5] Ronald A A, Zhao Hongping, Ee Yik-Khoon, et al. Spontaneous emission and characteristics of staggered InGaN quantum-well light-emitting diodes ［J］. 2008, 44(6): 573-580.

[6] Xia C X, Jiang F C, Wei S Y, et al. Hydrogenic impurity in zinc-blende GaN/AlGaN quantum dot ［J］. Microelectr. J., 2007, 38(6-7): 663-666.

[7] Garayt J P, Gerard J M, Enjalbert F, et al. Study of isolated cubic GaN quantum dots by low-temperature cathodoluminescence ［J］. Physica E, 2005, 2(1-4): 203-206.

[8] Zhu Haiyan, Zhang Tongyi, Zhao Wei. Intersubband optical absorption in a step asymmetric semiconductor quantum well driven by a terahertz field ［J］. J. Appl. Phys., 2009, 105: 043518.

[9] Lim A C, Gupta R, Haywood S K, et al. Electric field induced blueshift of the e1-hh1 exciton transition in a GaAs1-x Nx /GaAs (x<1%) stepped quantum well ［J］. Appl. Phys. Lett., 2006, 89: 261110.

[10] Li S S, Xia J B. Electronic states of a hydrogenic donor impurity in semiconductor nano-structures ［J］. Phys. Rev. A, 2007, 36(1-2): 120-123.

[12] Vartanian A L, Yeranosyan M A, Kirakosyan A A. Electron-phonon effect on the ground-state binding energy of hydrogenic impurity in quantum-well wire in presence of an electric field ［J］. Physica B-Condes. Matter., 2007, 390(1-2): 256-162.

[13] Jiang Liming, Wang Hailong, Wu Huiting. Electronic states of a shallow hydrogenic donor impurity in different shaped semiconductor quantum wells ［J］. Comm. in Theor. Phys., 2009, 51(6): 1135.

[14] Narayani V, Sukumar B. Polarizability of a shallow donor in a quantum well wire-geometric effects ［J］. Solid State Commun., 1994, 90(9): 575-579.

[15] Duque C A, Montes A, Morales A L, et al. Effects of an applied electric field on the binding energy of shallow donor impurities in GaAs low-dimensional systems ［J］. J. Phys.: Condes. Matter., 1997, 9(27): 5977.

[16] Ulas M, Akbas H, Tomak M. Shallow donors in a quantum well wire: Electric field and geometrical effects ［J］. Phys., 1998, 22(1): 369-375.

[17] Wu Huiting, Wang Hailong, Jiang Liming. The electric field effect on binding energy of hydrogenic impurity in zinc-blende GaN/Alx Ga1-x N spherical quantum dot ［J］. Physica B, 2009, 404(1): 122-126.

[18] Aktas S, Boz F K, Dalgic S S. Electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in a coaxial quantum well wire ［J］. Physica E, 2005, 28(1): 96-105.

[19] Kasapoglu E, Sari H, Sokmen I. Shallow donor impurities in different shaped double quantum wells under the hydrostatic pressure and applied electric field ［J］. Physica B: Condensed Matter., 2005, 362(1-4): 56-61.

[20] Kasapoglu E. Binding energy of donor impurities in double inverse parabolic quantum well under electric field ［J］. Physica E: Low-dimensional Systems and Nanostructures, 2009, 41(7): 1222-1225.

[21] Liang Shijun, Xie Wenfang, Li Xiaofeng, et al. Photoionization and binding energy of a donor impurity in a quantum dot under an electric field: Effects of the hydrostatic pressure and temperature ［J］. Superlattices and Microstructures, 2011, 49(6): 623-631.

[22] Paul Harrison. Quantum Wells, Wires and Dots ［M］. 2nd Edition, England: John Wiley and Sons Ltd., 2009: 1-168.

[23] Barseghyan M G, Hakimyfard Alireza, Kirakosyan A A, et al. Hydrostatic pressure and electric and magnetic field effects on the binding energy of a hydrogenic donor impurity in InAs Poschl-Teller quantum ring ［J］. Superlattices and Microstructures, 2012, 51 (1): 119-127.