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Journals >Journal of Semiconductors >Volume 44 >Issue 1 >Page 012701 > Article

Journal of Semiconductors
Vol. 44, Issue 1, 012701 (2023)

Electromechanical and photoelectric properties of a novel semiconducting Janus InGaSSe monolayer

Li Zhong¹, Xiaobao Li^1、2、*, Wei Wang¹, and Xinle Xiao^3、**

Author Affiliations

¹School of Civil Engineering, Hefei University of Technology, Hefei 230009, China

²Jiangsu Key Laboratory of Engineering Mechanics, Southeast University, Nanjing 210096, China

³Key Laboratory of MicroNano Powder and Advanced Energy Materials of Anhui Higher Education Institute, School of Chemistry and Materials Engineering, Chizhou University, Chizhou 247000, China

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DOI: 10.1088/1674-4926/44/1/012701 Cite this Article

Li Zhong, Xiaobao Li, Wei Wang, Xinle Xiao. Electromechanical and photoelectric properties of a novel semiconducting Janus InGaSSe monolayer[J]. Journal of Semiconductors, 2023, 44(1): 012701 Copy Citation Text

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References

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Li Zhong, Xiaobao Li, Wei Wang, Xinle Xiao. Electromechanical and photoelectric properties of a novel semiconducting Janus InGaSSe monolayer[J]. Journal of Semiconductors, 2023, 44(1): 012701

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