Yufei Liu, Xinyu Li, Shuxiao Wang, Wencheng Yue, Yan Cai, Mingbin Yu. Design and optimization of high-speed silicon-based electro-optical modulator in mid-infrared band (Invited)[J]. Infrared and Laser Engineering, 2022, 51(3): 20220092
- Infrared and Laser Engineering
- Vol. 51, Issue 3, 20220092 (2022)
Fig. 1. Optical mode field distribution of (a) 220 nm top silicon modulator in the wavelength of 1.55μm (W rib=500 nm, H slab=90 nm); (b) 220 nm top silicon modulator in the wavelength of 2 μm (W rib=600 nm, H slab=90 nm); (c) 340 nm top silicon modulator in the wavelength of 2 μm (W rib=600 nm, H slab=100 nm)
Fig. 2. Variation of (a) effective refractive index and (b) optical loss with the waveguide width (H rib=340 nm, H slab=100 nm) for TE0 and TE1 modes
Fig. 3. Schematic diagram of (a) cross section of the modulator and (b) top view of the modulator
Fig. 4. Under (a) −2 V and (b) −4 V bias, the optical loss and modulation efficiency of the modulator as a function of the PN junction offset
Fig. 5. (a) Optical loss and (b) modulation efficiency as a function of doping concentration under −2 V and −4 V bias
Fig. 6. (a) Optical loss and (b) modulation efficiency as a function of the position of the middle-doping region; (c) Optical loss and (d) modulation efficiency as a function of the position of the heavy-doping region
Fig. 7. Distribution of free carriers under (a) 0 V and (b) −4 V bias
Fig. 8. (a) Optical transmission under 0 V and −4 V bias; (b) Phase shift under different bias
Fig. 9. (a) Electrical bandwidth and (b) electro-optical bandwidth of the modulator
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Table 1. Comparisons of the modulator performance under the 2 μm wavelength band
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