Undoped and indium-doped zinc oxide films are deposited on Si substrates by radio frequency reactive sputtering technology. Glancing X-ray diffractometer (XRD) measurement indicated that In-doped sample is ZnO films. The structure, surfaces morphology and photoluminescent spectra of the sample are characterized by X-ray diffractometer, atomic force microscopy and fluorescent spectrophotometer, respectively. The effect of In-doping on the structure and photoluminescent properties of the films is analyzed. Compared with undoped ZnO film, In-doped ZnO film has highly c-axis oriented and the small lattice mismatch (0.16%). Surface of doped thin film is smooth and flat; the maximum roughness surface of sample is only 7nm. The blue-violet emission bi-peak locating at 415 nm and at 433 nm is observed in photoluminescence spectra of indium-doped ZnO films at room temperature. The mechanism of blue-violet emission bi-peak was discussed, and the blue-violet emission bi-peak is assigned to come from the In substitute impurity and Zn interstitial defects of ZnO.