Optical and electrical properties of Sb-doped β-Ga2O3 crystals grown by OFZ method

Baizhong Li; Pengkun Li; Lu Zhang; Ruifeng Tian; Qinglin Sai; Mingyan Pan; Bin Wang; Duanyang Chen; Youchen Liu; Changtai Xia; Hongji Qi

doi:10.3788/COL202321.041605

Journals >Chinese Optics Letters >Volume 21 >Issue 4 >Page 041605 > Article

Chinese Optics Letters
Vol. 21, Issue 4, 041605 (2023)

Optical and electrical properties of Sb-doped β-Ga₂O₃ crystals grown by OFZ method

Baizhong Li^1、2, Pengkun Li^1、2, Lu Zhang^1、2, Ruifeng Tian^1、2, Qinglin Sai¹, Mingyan Pan¹, Bin Wang¹, Duanyang Chen¹, Youchen Liu¹, Changtai Xia¹, and Hongji Qi^1、3、*

Author Affiliations

¹Key Laboratory of Materials for High Power Laser, Shanghai Institute of Optics and Fine Mechanics, Chinese Academy of Sciences, Shanghai 201800, China

²Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100049, China

³Hangzhou Institute of Optics and Fine Mechanics, Hangzhou 311421, China

show less

DOI: 10.3788/COL202321.041605 Cite this Article Set citation alerts

Baizhong Li, Pengkun Li, Lu Zhang, Ruifeng Tian, Qinglin Sai, Mingyan Pan, Bin Wang, Duanyang Chen, Youchen Liu, Changtai Xia, Hongji Qi. Optical and electrical properties of Sb-doped β-Ga₂O₃ crystals grown by OFZ method[J]. Chinese Optics Letters, 2023, 21(4): 041605 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Photos of the as grown Sb-doped β-Ga2O3 crystals. (a) 0.1% Sb; (b) 1.0% Sb; (c) 2.0% Sb.

Fig. 1. Photos of the as grown Sb-doped β-Ga₂O₃ crystals. (a) 0.1% Sb; (b) 1.0% Sb; (c) 2.0% Sb.

Download full size | View in the Article

XRD patterns of the database (PDF: 41-1103) and Sb-doped β-Ga2O3 single crystals.

Fig. 2. XRD patterns of the database (PDF: 41-1103) and Sb-doped β-Ga₂O₃ single crystals.

Download full size | View in the Article

Fig. 3. X-ray rocking curve for the (400) plane of 1.0% Sb-doped β-Ga₂O₃ single crystal.

Download full size | View in the Article

Fig. 4. Room temperature Raman spectra of Sb-doped β-Ga₂O₃ single crystals.

Download full size | View in the Article

Fig. 5. Room temperature Raman spectra of Sb-doped β-Ga₂O₃ single crystals in the 300–460 cm⁻¹ wavenumber range.

Download full size | View in the Article

Fig. 6. Optical transmittance of un-doped and Sb-doped β-Ga₂O₃ crystals. (a) 200–2000 nm (including their carrier concentrations), (b) 250–300 nm.

Download full size | View in the Article

	Sample 1	Sample 2	Sample 3
Nominal composition Sb (%)	0.1	1.0	2.0
Rod [ICP-AES (%)]	0.0142	0.0206	0.0309
Crystal [ICP-AES (%)]	0.0101	0.0157	0.0237
Effective segregation coefficient	0.71	0.76	0.77

Table 1. ICP-AES Data of Sb-Doped β-Ga₂O₃ Crystals with Different Sb Doping Concentrations

View in the Article

Samples	Carrier Type	Carrier Concentration (cm⁻³)	Mobility (cm² · V⁻¹ · s⁻¹)	Resistivity (Ω · cm)
$β - {Ga}_{2} O_{3}$	n	$9.55 \times 10^{16}$	153.1	0.603
$β - {Ga}_{2} O_{3} : Sb$ (0.1%)	n	$5.40 \times 10^{17}$	134.7	0.064
$β - {Ga}_{2} O_{3} : Sb$ (1%)	n	$1.54 \times 10^{18}$	126.4	0.037
$β - {Ga}_{2} O_{3} : Sb$ (2%)	n	$8.10 \times 10^{18}$	108.7	0.017