[1] Wang Kexin, Pang Fufeng, Wang Tingyun. Evanescent wave coupled semiconductor quantum dots fiber amplifier[J]. Chinese J. Lasers, 2007, 34(3): 398～401

[2] Li Zhixin. Ground-state lifetime of strong-coupling bound magnetopolaron in asymmetrical quantum dot[J]. Acta Optica Sinica, 2008, 28(12): 2416～2419

[3] Lin Li, Guojun Liu, Zanhuo Li et al.. Growth and characterization of InAs quantum dots with low-density and long emission wavelength[J]. Chin. Opt. Lett., 2008, 6(1): 71～73

[4] D. Bimberg, C. Meuer, M. Lammlin et al.. Nonlinear properties of quantum dot semiconductor optical amplifiers at 1.3 μm[J]. Chin. Opt. Lett., 2008, 6(10: 724～726

[5] Niu Zhichuan, Wang Xiaodong, Miao Zhenhua et al.. Photoluminescence properties of self-organized InGaAs/GaAs quantum dot structures [J]. Journal of Infrared and Millimeter Waves, 2001, 20(1):20～24

[6] H. Y. Liu, M. Hopkinson, C. N. Harrison et al.. Optimizing the growth of 1.3 μm InAs/InGaAs dots-in-a-well structure [J]. J. Appl. Phys., 2003, 93:2931～2936

[7] Kong Lingmin, Wu Zhengyun, Feng Zhechuan et al.. Photolumnescence characteristics of InAs self-assembled quantum dots in InGaAs/GaAs quantum well [J]. J. Appl. Phys., 2007, 101:126101

[8] K. Nishi, H. Saito, S. Sugou et al.. A narrow photoluminescence linewidth of 21 meV at 1.35 μm from strain-reduced InAs quantum dots covered by In0.2Ga0.8As grown on GaAs substrates [J]. Appl. Phys. Lett., 1999, 74:1111

[9] S. Huang, Z. C. Niu, H. Q. Ni et al.. Fabrication of ultra-low density and long-wavelength emission InAs quantum dots [J]. J. Cryst. Growth, 2007, 301-302:751

[10] J. Bloch, J. Shah, W. S. Hobson et al.. Room-temperature 1.3 μm emission from InAs quantum dots grown by metal organic chemical vapor deposition [J]. Appl. Phys. Lett., 1999, 75:2199

[11] Wang Hailong, Zhu Haijun, Feng Songlin et al.. Photoluminescence in Be-doped self-organized InAs quantum dots [J]. Chinese Journal of Luminescence, 2000, 21(1):20～23

[12] Chen Ye, Zhang Wang, Li Guohua et al.. Photoluminescence study of multilayer In0.55Al0.45As/Al0.5Ga0.5As quantum dot at variouss temperature [J]. Journal of Infrared and Millimeter Waves, 2000, 19(1):19～23

[13] Jiang Weihong, Xu Huanzhe, Gong Qian et al.. Stuctural and optical properties of self-assembed InAs quantum dots grown on GaAs(311)A substrate[J]. Acta Physica Sinica, 1999, 48(8):1541～1546

[14] E. Dekel, D. Gershoni, E. Ehrenfreund. Carrier-carrier correlations in an optically excited single semiconductor quantum dot [J]. Phys. Rev. B, 2000, 61:11009～11020

[15] Kim Jin Soo, Lee Cheul-Ro, Hong Sung Ui. Structural and optical properties of shape-engineered InAs dots in a GaAs matrix emitting at 1.27 mm [J]. J. Cryst. Growth, 2007, 305:78～82

[16] Yu Haiping, Lycett Sam, Roberts Chritine et al.. Time resolved study of self-assembled InAs quantum dots [J]. Appl. Phys. Lett., 1996, 69:4087

[17] Kong Lingmin, Feng Zhechuan, Wu Zhengyun et al.. Emission dynamics of InAs self-assembled quantum dots with different cap layer structures [J]. Semicondutor Science and Technology, 2008, 23:075044