• Acta Optica Sinica
  • Vol. 26, Issue 5, 752 (2006)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Research on Reflection Spectrum of Al0.5Ga0.5As-AlAs Distributed Bragg Reflector at Different Incidence Angles[J]. Acta Optica Sinica, 2006, 26(5): 752 Copy Citation Text show less
    References

    [1] Hideto Sugawara, Kazuhiko Itaya, Gen-ichi Hatakoshi. Hybrid-type InGaAlP/GaAs Distributed Bragg reflectors for InGaAlP light-emitting diodes[J]. Jpn. J. Appl. Phys., 1994, 33(11): 6195~6198

    [2] H. Sugawara, K. Itaya. High-Brightness InGaAlP green light-emitting diodes[J]. Appl. Phys. Lett., 1992, 61(15): 1775~1777

    [3] Hidenao Tanaka, Yuichi Kawamura, Hajime Asahi. Refractive indices of In0.49Ga0.51-xAlxP lattice matched to GaAs[J]. J. Appl. Phys., 1986, 59(3): 985~986

    [4] T. Saka, M. Hirotani, T. Kato et al.. Bragg reflector of GaAlAs/AlAs layers with wide bandwidth applicable to light emitting diodes[J]. J. Appl. Phys., 1993, 73(1): 380~383

    [5] A. Bhattacharya, M. Nasarek, U. Zeimer et al.. Comprehensive characterization of MOVPE growth AlGaAs/AlAs distributed Bragg reflector structures by optical reflectance, X-ray diffraction and atomic force microscopy[J]. J. Crystal Growth, 2005, 274(3~4): 331~338

    [9] Aleksandra B. Djurisic, Aleksandar D. Rakic, Paul C. K. Kwok et al.. Modeling the optical constants of AlxGa1-xAs alloys[J]. J. Appl. Phys., 1999, 86(1): 445~451

    [10] D. E. Aspnes, S. M. Kelso, R. A. Logan et al.. Optical properties of AlxGa1-xAs[J]. J. Appl. Phys., 1986, 60(2): 754~766

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Research on Reflection Spectrum of Al0.5Ga0.5As-AlAs Distributed Bragg Reflector at Different Incidence Angles[J]. Acta Optica Sinica, 2006, 26(5): 752
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