Growth and defects characterization of HgCdTe film grown by LPE method

[in Chinese]; [in Chinese]; [in Chinese]

Journals >Infrared and Laser Engineering >Volume 35 >Issue 3 >Page 294 > Article

Infrared and Laser Engineering
Vol. 35, Issue 3, 294 (2006)

Growth and defects characterization of HgCdTe film grown by LPE method

[in Chinese]^*, [in Chinese], and [in Chinese]

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[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese]. Growth and defects characterization of HgCdTe film grown by LPE method[J]. Infrared and Laser Engineering, 2006, 35(3): 294 Copy Citation Text

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References

[1] NORTON P.HgCdTe infrared detectors[J].Opto -Electronics Review,2003,10(3):159-174.

[2] ROGALSKI A.Infrared detectors:an overview[J].Infrared Physics &Technology,2002,43:187-210.

[3] HANSEN G L,SCHMIT J L,CASSELMAN T N.Energy gap versus alloy composition and temperature in Hg1-xCdxTe[J].J Appl Phys,1982,53:7099-7101.

[4] PARKER S G,WEIRAUCH D F,CHANDRA D.Terracing in HgCdTe LPE films grown from Te solution[J].J Crystal Growth,1988,86:173-182.

[5] BAUSER E.Development of depressions and voids during LPE growth of GaAs[J].Appl Phys,1978,15:243-252.

CLP Journals

[1] Wenbin Qi, Shuren Cong, Linwei Song, Pei Li, Xianyan Jiang, Jianyun Yu, Zhuo Ning, Wenbin Deng, Jincheng Kong. Review of defects of HgCdTe films grown by LPE[J]. Infrared and Laser Engineering, 2023, 52(7): 20220804

[in Chinese], [in Chinese], [in Chinese]. Growth and defects characterization of HgCdTe film grown by LPE method[J]. Infrared and Laser Engineering, 2006, 35(3): 294

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