• Journal of Infrared and Millimeter Waves
  • Vol. 31, Issue 2, 118 (2012)
ZHOU Peng, WEI Hong-Qiang, SUN Qing-Qing, YE Li, CHEN Lin, WU Dong-Ping, DING Shi-Jin, and ZHANG Wei
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  • [in Chinese]
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    DOI: Cite this Article
    ZHOU Peng, WEI Hong-Qiang, SUN Qing-Qing, YE Li, CHEN Lin, WU Dong-Ping, DING Shi-Jin, ZHANG Wei. High-k gate oxides integration of graphene based infrared detector[J]. Journal of Infrared and Millimeter Waves, 2012, 31(2): 118 Copy Citation Text show less
    References

    [1] Kin F M, Matthew Y S, James A M, et al. The evolution of electronic structure in few-layer graphene revealed by optical spectroscopy[J]. PNAS,2010,107(34):1499915004.

    [2] Lin Y M, Dimitrakopoulos C, Jenkins K A, et al. 100 GHz transistors from wafer-scale epitaxial graphene[J]. Science,2010,327(5966):662.

    [3] Castro E V, Novoselov K S, Morozov S V, et al. Biased bilayer graphene: semiconductor with a gap tunable by the electric field effect[J]. Phys. Rev. Lett.,2007,99(21):216802.

    [4] Zhang Y B, Tang T T, Girit C, et al. Direct observation of a widely tunable bandgap in bilayer graphene[J]. Nature,2009,459:820823.

    [5] Novoselov K S, Geim A K, Morozov S V, et al. Electric field effect in atomically thin carbon films[J]. Science,2004,306(5696):666669.

    [6] Park S J,Ruoff R S. Chemical methods for the production of graphenes[J]. Nature Nanotechnology,2009,4:217224.

    [7] McAllister M J, Li J L, Adamson D H, et al. Single sheet functionalized graphene by oxidation and thermal expansion of graphite[J]. Chem. Mater.,2007,19(18):43964404.

    [8] Emtsev K V, Bostwick A, Horn K, et al. Towards wafer-size graphene layers by atmospheric pressure graphitization of silicon carbide[J]. Nat. Mater.,2009,8:203207.

    [9] Wang X B, You H J, Liu F M, et al. Large-scale synthesis of few-layered graphene using CVD[J]. Chem. Vap. Deposition,2009,15(1-3):5356.

    [10] Ni Z H, Wang Y H, Yu T, et al. Raman spectroscopy and imaging of graphene[J]. Nano Res,2008,1(4):273291.

    [11] Srivastava A, Galande C, Ci L J, et al. Novel liquid precursor-based facile synthesis of large-area continuous, single, and few-layer graphene films[J]. Chem. Mater.,2010,22(11):34573461.

    [12] Bae S, Kim H, Lee Y B, et al. 30 inch roll-based production of high-quality graphene films for flexible transparent electrodes[J]. Nature Nanotechnology,2010,5:574578.

    [13] Lin Y M,Jenkins K A,Garcia A V,et al. Operation of graphene transistors at gigahertz frequencies[J]. Nano Lett.,2009,9(1):422426.

    [14] Farmer D B, Chiu H Y, Lin Y M, et al. Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors[J]. Nano Letters,2009,9(12):44744478.

    [15] Meric I, Han M Y, Young A F, et al. Current saturation in zero bandgap, top-gated graphene field-effect transistors[J]. Nature Nanotechnology,2008,3:654659.

    [16] Lin Y M, Chiu H Y, Jenkins K A, et al. Dual-gate graphene FETs with fT of 50 GHz[J]. IEEE Electron Device Letters,2010,31(1):6870.

    [17] Lemme M C, Echtermeyer T J, Baus M, et al. A graphene field-effect device[J]. IEEE Electron Device Letters,2007,28(4):282284.

    [18] Kim S, Nah J, Jo I, et al. Realization of a high mobility dual-gated graphene field-effect transistor with Al2O3 dielectric[J]. Applied Physics Letters,2009,94(6):062107.

    [19] Liao L, Bai J W, Qu Y Q, et al. High-k oxide nanoribbons as gate dielectrics for high mobility top-gated graphene transistors[J]. PNAS,2010,107(15):67116715.

    [20] Pince E,Kocabas C. Investigation of high frequency performance limit of graphene field effect transistors[J]. Appl.Phys. Lett.,2010,97(17):173106.

    [21] Adam S, Hwang E H, Galitski V M, et al. A self-consistent theory for graphene transport[J]. PNAS,2007,104(47):1839218397.

    [22] Meric I, Dean C, Young A, et al. Graphene field-effect transistors based on boron nitride gate dielectrics[C]. IEDM Tech.Dig.,2010,10.

    [23] Williams J R,DiCarlo L,Marcus C.M. Quantum hall effect in a gate-controlled p-n junction of graphene[J]. Science,2007,317(5838):638641.

    [24] Wang X R, Tabakman S M, Dai H J, et al. Atomic layer deposition of metal oxides on pristine and functionalized graphene[J]. Journal of The American Chemical Society,2008,130(26):81528153.

    [25] Liao L, Bai J W, Cheng R, et al. Top-gated graphene nanoribbon transistors with ultrathin high-k dielectrics[J]. Nano Letters,2010,10(5):19171921.

    ZHOU Peng, WEI Hong-Qiang, SUN Qing-Qing, YE Li, CHEN Lin, WU Dong-Ping, DING Shi-Jin, ZHANG Wei. High-k gate oxides integration of graphene based infrared detector[J]. Journal of Infrared and Millimeter Waves, 2012, 31(2): 118
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