Influence of Substrate Thickness on the Stabilization of Light Emitting Doides

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 20 >Issue 1 >Page 125 > Article

Chinese Journal of Quantum Electronics
Vol. 20, Issue 1, 125 (2003)

Influence of Substrate Thickness on the Stabilization of Light Emitting Doides

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², and [in Chinese]²

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Influence of Substrate Thickness on the Stabilization of Light Emitting Doides[J]. Chinese Journal of Quantum Electronics, 2003, 20(1): 125 Copy Citation Text

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References

[1] Bour D P, Shealy J R. Organometallic vapor phase expitaxial growth of (AlxGa1-x)0.5In0.5P and its heterostructures [J]. IEEE J. Quantum Electron, 1988, 24:1856-1863

[2] Hatakoshi G, Nitta K, Iataya Y et al. High-power InGaAlP laser diodes for high-density optical recording [J]. J.J. Appl. Phys., 1992, 31:501-507

[3] Huang K H, Yu J G, Kuo C P et al. Twofold efficiency improvement in high performance AlGaInP light emitting diodes in the 555～620 nm region using a thick GaP window layer [J]. Appl. Phys. Lett., 1992, 61(9): 1045-1047

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