Development of silicon single photon detector and its application in high-precision satellite-to-ground time comparison (Invited)

Qiaoli Liu; Chang Liu; Yitong Wang; Lingxiang Hao; Yongqing Huang; Anqi Hu; Xia Guo

doi:10.3788/IRLA20211004

Journals >Infrared and Laser Engineering >Volume 50 >Issue 1 >Page 20211004 > Article

Infrared and Laser Engineering
Vol. 50, Issue 1, 20211004 (2021)

Development of silicon single photon detector and its application in high-precision satellite-to-ground time comparison (Invited)

Qiaoli Liu, Chang Liu, Yitong Wang, Lingxiang Hao, Yongqing Huang, Anqi Hu, and Xia Guo

Author Affiliations

School of Electronic Engineering, Beijing University of Posts and Telecommunications, Beijing 100876, China

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DOI: 10.3788/IRLA20211004 Cite this Article

Qiaoli Liu, Chang Liu, Yitong Wang, Lingxiang Hao, Yongqing Huang, Anqi Hu, Xia Guo. Development of silicon single photon detector and its application in high-precision satellite-to-ground time comparison (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211004 Copy Citation Text

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Fig. 1. [in Chinese]

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Fig. 2. [in Chinese]

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Structure	M. Ghioni	SPCM-AQ
Thickness of absorption layer/μm	5	>30
Diameter/μm	200	100-500
Breakdown voltage/V	36	100-500
DCR/kHz	50 (20 ℃)	<1
PDE	52%@550 nm 15%@820 nm	>50%@540 nm-850 nm
Timing jitter/ps	~35	~300

Table 1. [in Chinese]

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	Diameter/μm	DCR/Hz	PDE	Timing jitter/ps
This work	200	3 k (13.7%@709 nm)	52.2%@709 nm 38.2%@532 nm	46 (V_ex=1.07 V)
Politecnico di MilanoK14^[11]	200	~2.5 k (T=−60 ℃,V_ex=1 V)	≥40% (500-800 nm)	~47 (T=−60 ℃,V_ex=3.8 V)
MPDPDM series^[14]	20-100	5-1000	24%@400 nm 49%@550 nm 37%@650 nm	~30 (V_ex=5 V)
Laser components COUNT-T-100^[15]	100	≤100 (V_ex=12 V)	40%@405 nm 75%@670 nm 60%@810 nm	350 (V_ex=12 V)
Excelitas SPCM-AQRH-XX-TR^[16]	180	10-1500 (V_ex=5.5 V)	75%@650 nm 50%@830 nm	225 (V_ex=5.5 V)

Table 2. [in Chinese]

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