980nm HIGH POWER BOTTOM EMITTING VCSELS

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Journal of Infrared and Millimeter Waves >Volume 24 >Issue 1 >Page 61 > Article

Journal of Infrared and Millimeter Waves
Vol. 24, Issue 1, 61 (2005)

[in Chinese]^1、2, [in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]³, [in Chinese]³, and [in Chinese]³

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. 980nm HIGH POWER BOTTOM EMITTING VCSELS[J]. Journal of Infrared and Millimeter Waves, 2005, 24(1): 61 Copy Citation Text

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References

[1] Iga K F Koyama, Kinoshita S. Surface emitting semiconductor lasers [J]. IEEE J. f Quantum Electronics, 1988, 24:1845-1855.

[2] Michalzik R, Grabherr M, Jager R, et al. Progress in high power vcsels and arrays[J]. SPIE, 1998, 3419: 187-195.

[3] Grabherr M, Miller M, Jager R, et al. High-power VCSEL s: single devices and densely packed 2-D-arrays[J]. IEEE J. Select. Topics Quantum Electron, 1999, 5: 495-502.

[4] Martin Grabherr, Ihab Kardosh. Improved output performance of high-power VCSELs[ R]. Annual Report 2001, Optoelectronics department, University of Ulm, 2001.

CLP Journals

[1] Zhong Gang, Hou Lifeng, Wang Xiaoman. High-Power Vertical-Cavity Surface-Emitting Laser with AlN Film Passivation Layer[J]. Chinese Journal of Lasers, 2011, 38(9): 902002

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