[1] BAKER I M, CRIMES G J, PARSONS J E, et al. CdHgTe-CMOS hybrid focal plane arrays-a flexible solution for advanced infrared systems [J].SPIE,1994,2269: 636-647.
[2] AQARIDEN F, DREISKE P D, KINCH M A, et al. Development of molecular beam epitaxially grown Hg1-xCdxTe for high-density vertically-integrated photodiode-based focal plane arrays [J]. Journal of Electronic Materials,2007,36(8): 900-904.
[3] DREISKE P D. Development of two-color focal-plane arrays based on HDVIP [J]. Proc. of SPIE,2005,5783: 325-330.
[4] DSOUZA A I, STAPELBROEK M G, YONEYAMA C, et al. SWIR HgCdTe HDVIP detectors MTF monte carlo modeling and data [J]. Proc. of SPIE, 2010,7660: 76600Q1-76600Q6.
[5] IVANOV-OMSKII V I, MIRONOV K E, MYNBAEV K D, et al. Hg1-xCdxTe doping by ion-beam treatment [J]. Semicond. Sci. Technol,1993,8: 634-637.
[6] IZHNIN I I, IZHNIN A I, KURBANOV K R, et al. P-to-n ion beam milling conversion in specially doped CdxHg1-xTe [J]. SPIE,1993,2269: 636-647.
[7] HAAKENAASEN R, MOEN T, COLIN T, et al. Depth and lateral extension of ion milled pn junctions in CdxHg1-xTe from electron beam induced current measurements [J]. Journal of Applied Physics,2002,91(1): 427-432.
[8] BERCHENKO N N, BOGOBOYASHCHYY V V, IZHNIN I I, et al. Conductivity type conversion in p-CdxHg1-xTe [J]. Opto-Electronics Review, 2003, 11(2): 93-98.