• Journal of Infrared and Millimeter Waves
  • Vol. 33, Issue 5, 477 (2014)
XU Guo-Qing1、2、*, LIU Xiang-Yang1, WANG Reng1, CHU Kai-Hui1, TANG Yi-Dan1, QIAO Hui1, JIA Jia1, and LI Xiang-Yang1
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
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    DOI: 10.3724/sp.j.1010.2014.00477 Cite this Article
    XU Guo-Qing, LIU Xiang-Yang, WANG Reng, CHU Kai-Hui, TANG Yi-Dan, QIAO Hui, JIA Jia, LI Xiang-Yang. Conductivity type conversion in ion-beam-milled HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2014, 33(5): 477 Copy Citation Text show less

    Abstract

    After different loopholes are produced by Ar+ ion-beam in p-HgCdTe, width of n-type layer has been defined by the electron beam induced current measurement. It can be observed that under the same milling condition, the width of n-type layer depends on both of the mercury vacancy concentration and the volume of the milled-HgCdTe. Further study shows that the width of n-type layer linearly decreases with an increase of the mercury vacancy concentration if volume of the milled-HgCdTe is equal. Meanwhile, the width of n-type layer will linearly increases with volume of the milled-HgCdTe increasing if the mercury vacancy concentration is kept unchanged.
    XU Guo-Qing, LIU Xiang-Yang, WANG Reng, CHU Kai-Hui, TANG Yi-Dan, QIAO Hui, JIA Jia, LI Xiang-Yang. Conductivity type conversion in ion-beam-milled HgCdTe[J]. Journal of Infrared and Millimeter Waves, 2014, 33(5): 477
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