Recent progress of GaN based quantum well infrared photodetector (Invited)

Feng Wu; Jiangnan Dai; Changqing Chen; Jintong Xu; Weida Hu

doi:10.3788/IRLA20211020

Journals >Infrared and Laser Engineering >Volume 50 >Issue 1 >Page 20211020 > Article

Infrared and Laser Engineering
Vol. 50, Issue 1, 20211020 (2021)

Recent progress of GaN based quantum well infrared photodetector (Invited)

Feng Wu^1、*, Jiangnan Dai¹, Changqing Chen¹, Jintong Xu², and Weida Hu²

Author Affiliations

¹Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology, Wuhan 430074, China

²Shanghai Institute of Technical Physics, Chinese Academy of Sciences, Shanghai 200083, China

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DOI: 10.3788/IRLA20211020 Cite this Article

Feng Wu, Jiangnan Dai, Changqing Chen, Jintong Xu, Weida Hu. Recent progress of GaN based quantum well infrared photodetector (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211020 Copy Citation Text

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References

[10] B F Levine, K K Choi, C G Bethea. New 10 μm infrared detector using intersubband absorption in resonant tunneling GaAlAs superlattices. Applied Physics Letters, 50, 1092-1094(1987).

Feng Wu, Jiangnan Dai, Changqing Chen, Jintong Xu, Weida Hu. Recent progress of GaN based quantum well infrared photodetector (Invited)[J]. Infrared and Laser Engineering, 2021, 50(1): 20211020

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