• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 3, 305 (2005)
[in Chinese]*, [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microstructure fiber based laser devices[J]. Chinese Journal of Quantum Electronics, 2005, 22(3): 305 Copy Citation Text show less

    Abstract

    The microstructure fiber (MF) based laser devices have outstanding performance comparing with the normal fiber based laser devices because of the flexible and various airhole microstructure. Based on the recent international progress on MF based laser devices, we summarize the unique characteristics of the MF as laser gain medium firstly. Then the theoretical analysis method and process of MF based laser devices was discussed. Finally, the characteristics of Er3+-doped, Yb3+-doped and Raman MF laser or amplifier are analyzed and discussed, respectively.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Microstructure fiber based laser devices[J]. Chinese Journal of Quantum Electronics, 2005, 22(3): 305
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