Relation of Two-Photon Absorption Optical Limiting and Optical Wave Polarization Orientationin GaAs Semiconductor

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[1] L. W. Tuff, T. F. Boggess. A review of optical limiting mechanisms and devices using organics, fullerences, semiconductors and other materials. Prog. Quant. Electron., 1993, 17(4): 199～338

[2] J. M. Ralston, R. K. Chang. Optical limiting in semiconductors. Appl. Phys. Lett., 1969, 15(3): 164～165

[3] T. F. Boggess, A. L. Smirl, S. C. Moss et al.. Optical limiting in GaAs. IEEE J. Qunat. Electron., 1985, QE-21(5): 488～494

[4] D. J. Hagan, E. W. van Stryland, M. J. Soileau et al.. Self-protecting semiconductor optical limiters. Opt. Lett., 1988, 13(4): 315～317

[5] R. De Salvo, M. Sheik-Bahae, A. A. Said et al.. Z-scan measurement of the anisotropy of nonlinear refraction and absorption in crystals. Opt. Lett., 1993, 18(3): 194～196

[6] D. C. Hutchings, B. S. Wherrett. Theory of anisotropy of two-photon absorption in zinc blende semiconductors. Phys. Rev. (B), 1994, 49(4): 2418～2426

[7] T. D. Krauss, J. K. Ranka, F. W. Wise et al.. Measurements of the tensor properties of third-order nonlinearities in wide-gap semiconductors. Opt. Lett., 1995, 20(10): 1110～1112

[8] D. C. Hutchings, B. S. Wherrett. Theory of the anisotropy of ultrafast nonlinear refraction in Zine-blende semiconductors. Phys. Rev. (B), 1995, 52(11): 8150～8159

[9] D. C. Hutchings. Nonlinear optical activity owing to anisotropy of ultrafast nonlinear refraction in cubic materials. Opt. Lett., 1995, 20(5): 1607～1609

[10] A. A. Said, M. Sheik-Bahae, D. J. Hagan et al.. Determination of bound electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe. J. Opt. Soc. Am. (B), 1992, 9(3): 405～414