Shuai Wang, Qin Han, Han Ye, Liyan Geng, Ziqing Lu, Feng Xiao, Fan Xiao. Temperature dependency of InGaAs/InP single photon avalanche diode for 1 550 nm photons[J]. Infrared and Laser Engineering, 2021, 50(11): 20210453
- Infrared and Laser Engineering
- Vol. 50, Issue 11, 20210453 (2021)
Fig. 1. Cross-section of the SPAD structure and its internal electric field distribution
Fig. 2. (a) Dark current and photocurrent at 1 550 nm as a function of bias voltage for SPAD at temperature of 223-293 K；(b) Breakdown voltage versus temperature data (symbols) and linear fitting (line)
Fig. 3. Temperature dependence of PDE and DCR of 25 μm diameter SPADs (color online)
Fig. 4. Activation energies of DCR at 2 V excess bias
Fig. 5. PDE and DCR dependence on excess bias of 25 μm-diameter SPAD at 223 K
Fig. 6. Relationship between APP and the operate temperature at 2 V excess bias
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