• Chinese Journal of Quantum Electronics
  • Vol. 22, Issue 2, 251 (2005)
[in Chinese]1、*, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]1, and [in Chinese]1、2
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Schottky barrier of 4H-SiC at different anealing temperature[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 251 Copy Citation Text show less
    References

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    [3] Itoh A, Kimoto T, et al. High performance of high-voltage 4H-SiC Schottky barrier diodes [J]. IEEE Electron Devices Lett., 1995, 16: 280.

    [4] Weitzel C E, PalmourJ W, et al. 4H-SiC MESFET with 2.8 W/mm power density at 1.8 GHz [J]. IEEE Electron Devices Lett., 1994, 15: 406.

    [5] Itoh A, et al. Analysis of schottky barrier heights of metal/SiC contacts and its possible application to high-voltage rectifying devices [J]. Phys. Status. Solidi (A), 1997, 162: 389.

    [6] Schoen K J, et al. Design considerations and experimental analysis of high-voltage SiC Schottky barrier rectifiers [J]. IEEE Trans. Electron Devices, 1998, 45: 1595.

    [7] Saxena V, et al. High-voltage Ni- and Pt-SiC Schottky diodes utilizing metal field plate termination [J]. IEEE Trans Electron Devices, 1999, 46: 456.

    [8] Alok D, et al. Effect of surface preparation and thermal anneal on electrical characteristics of 4H-SiC Schottky barrier diodes [J]. Mater. Sci, Forum., 1998, 264-268: 929.

    [9] Kestle A, et al. Improved Ni/SiC Schottky diode formation [J]. Electronics Lett., 200, 36: 267.

    [10] SZE S.M, Physics of Semiconductor Devices[M].John Wiley & Sons,Inc, 1969. 225-242.

    [11] Hatayama T, et al. Electrical properties and interface reaction of annealed Cu/4H-SiC Schottky rectifiers [J].Materials Science Forum, 2002, 389-393: 925-928.

    [12] Mariusz S, et al. Influence of annealing on reverse current of 4H-SiC Schottky diodes [J]. Diamond and Related Materials, 2002, 11: 1263-1267.

    [13] Pecz B. Contact formation in SiC devices [J]. Applied Surface Science, 2001, 184: 287-294.

    [14] Michaelson H B. The work function of the elements and its periodicity [J]. J. of Appl. Phys., 1977, 48(11):4729-4733.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Study on Schottky barrier of 4H-SiC at different anealing temperature[J]. Chinese Journal of Quantum Electronics, 2005, 22(2): 251
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