After the chip preparation process is completed, a certain thickness of the substrate is left for the chip, the excess cadmium zinc telluride substrate is removed by wire sawing technology, and then the polishing process is repeated. The Zn composition distribution and full width at half maximum (FWHM) test results of the cadmium zinc telluride substrate show that the CdZnTe substrate is of good quality and can be used to prepare the liquid phase epitaxial HgCdTe thin-film again. The properties of the newly prepared HgCdTe are qualified after standard detector chip technology. This research allows the reuse of the original substrate that is originally to be completely removed, improves the utilization rate of the CdZnTe substrate, and reduces the manufacturing cost of the detector.