• Journal of Infrared and Millimeter Waves
  • Vol. 40, Issue 1, 50 (2021)
Wei WANG1、2, Xi-Ren CHEN2, Deng-Guang YU1、*, and Jun SHAO2、**
Author Affiliations
  • 1School of Materials Science and Engineering,University of Shanghai for Science and Technology,Shanghai 200093,China
  • 2State Key Laboratory of Infrared Physics,Shanghai Institute of Technical Physics,Chinese Academy of Sciences,Shanghai 200083,China
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    DOI: 10.11972/j.issn.1001-9014.2021.01.009 Cite this Article
    Wei WANG, Xi-Ren CHEN, Deng-Guang YU, Jun SHAO. Fourier transform infrared Raman spectroscopy for probing semiconductor substrates beneath epitaxial films[J]. Journal of Infrared and Millimeter Waves, 2021, 40(1): 50 Copy Citation Text show less
    Schematic of FT Raman measurement. Inset: spatial intensity profile of the 1064 nm pumping light at the confocal point measured by an optical beam profiler
    Fig. 1. Schematic of FT Raman measurement. Inset: spatial intensity profile of the 1064 nm pumping light at the confocal point measured by an optical beam profiler
    PL spectra of CdTe/GaAs thin film and GaAs substrate at 77 K. Blue line: zoomed-in of the partial PL spectrum
    Fig. 2. PL spectra of CdTe/GaAs thin film and GaAs substrate at 77 K. Blue line: zoomed-in of the partial PL spectrum
    FT infrared Raman spectra of CdTe/GaAs thin film and GaAs substrate. Inset: normalized local Raman spectra of LO phonon
    Fig. 3. FT infrared Raman spectra of CdTe/GaAs thin film and GaAs substrate. Inset: normalized local Raman spectra of LO phonon
    FT infrared Raman spectra of CdTe/GaAs thin film at different excitation power . Inset: evolutions of FWHM(a) and Raman Intensity(b) with excitation power
    Fig. 4. FT infrared Raman spectra of CdTe/GaAs thin film at different excitation power . Inset: evolutions of FWHM(a) and Raman Intensity(b) with excitation power
    Raman spectra of CdTe/GaAs thin film measured by (a)visible Raman spectra at 514 nm; (b) FT infrared Raman spectra at 1064 nm
    Fig. 5. Raman spectra of CdTe/GaAs thin film measured by (a)visible Raman spectra at 514 nm; (b) FT infrared Raman spectra at 1064 nm
    Wei WANG, Xi-Ren CHEN, Deng-Guang YU, Jun SHAO. Fourier transform infrared Raman spectroscopy for probing semiconductor substrates beneath epitaxial films[J]. Journal of Infrared and Millimeter Waves, 2021, 40(1): 50
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