The residual stress in the SiO2 films deposited by electron beam evaporation under different conditions is measured by viewing the substrate deflection using GPI optical interferometer in different under cordition. The influences of deposition temperatures, oxygen partial pressure and aging on the The residual stress varies from -223.5 MPa to 20.4 MPa when the oxygen partial pressure increased from 3.0×10-3 Pa to 13.0×10-3 Pa, and from -150 MPa to -289 MPa when temperature increased from 190 ℃ to 350 ℃ which may be attributed to the variation of the microstructure concluding from the variation of the refractive index. An evolution of residual stress from compressive to tensile with time of sample storage in a conventional clean-room environment is measured for all evaporated SiO2 films investigated.