Design of a high extraction efficiency light-emitting diode with two crossed grating structures

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

[1] SCHUBERT E F.Light Emitting Diodes[M].Cambridge:Cambridge University Press,2003.

[2] WINDISCH R,ROOMAN C,KUIJK M,et al.Impact of texture-enhanced transmission on high-efficiency surfacetextured light-emitting diodes[J].Appl Phys Lett,2001,79:2315-2317.

[3] Hiroyuki Ichikawa,Toshihiko Baba.Efficiency enhancement in a light-emitting diode with a two-dimensional surface grating photonic crystal[J].Appl Phys Lett,2004,84:457-459.

[4] PAN Shyi-Ming,TU Ru-Chin,FAN Yu-Mei,et al.Improvement of InGaN-GaN light-emitting diodes with surface-texture indium -tin -oxide transparent ohmic contacts[J].IEEE Photonics Technol Lett,2003,15:649-651.

[5] HONG Hyun-Gi,KIM Seok-Soon,KIM Dong-Yu,et al.Enhancement of the light output of GaN-based ultraviolet light -emitting diodes by a one-dimensional nanopatterning process[J].Appl Phys Lett,2006,88:103505.

[6] SCHNITZER I,YABLONOVITCH E,CANEAU C,et al.Ultrahigh spontaneous emission quantum efficiency,99.7%internally and 72% externally,from AlGaAs/GaAs/AlGaAsdouble heterostructures[J].Appl Phys Lett,1993,62:131-133.

[7] ROGERS T J,DEPPE D G,STREETMAN B G.Effect of an AlAs/GraAs mirror on the spontaneous emission of an InGaAsGaAs quantum well[J].Appl Phys Lett,1990,57:1858-1860.

[8] Hisao Kikuta,Shunsuke Hino,Akira Maruyama,et al.Estimation method for the light extraction efficiency of lightemitting elements with a rigorous grating diffraction theor[J].J Opt Soc Am A,2006,23:1207-1213.

[9] Wei Chih Peng,YewChung Sermon Wu.Enhanced performance of an InGaN-GaN light-emitting diode by roughening the undoped-GaN surface and applying a mirror coating to the sapphire substrate[J].Appl Phys Lett,2006,88:181117.

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