Quantum Confinement Effect on PL Spectrum of InGaAs/AlGaAs Multi-quantum Wells

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 20 >Issue 3 >Page 345 > Article

Chinese Journal of Quantum Electronics
Vol. 20, Issue 3, 345 (2003)

Quantum Confinement Effect on PL Spectrum of InGaAs/AlGaAs Multi-quantum Wells

[in Chinese]¹, [in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]^1、2, [in Chinese]^1、2, and [in Chinese]²

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¹[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Quantum Confinement Effect on PL Spectrum of InGaAs/AlGaAs Multi-quantum Wells[J]. Chinese Journal of Quantum Electronics, 2003, 20(3): 345 Copy Citation Text

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References

[1] Chang K H, Bhattacharya P K, Gibala R. Transmission electron microscopy of strained InyGa1-yAs/GaAs multiquantum wells: The generation of misfit dislocations [J]. Appl. Phys., 1989, 65(9): 3391-3394

[4] Wang C A. New materials for diode laser pumping of solid-state lasers [J]. IEEE J. QE., 1992, 28(4): 942-951

[5] Madelung O. Landolt-Bornstein Numerical Data and Functional Relationships in Science and Technology [M]. Ⅲ /17a. Berlin: Springer, 1982

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