Surface-plasmon-enhanced GaN-LED based on nano-grating

Li Zhiquan; Liu Tonglei; Bai Landi; Xie Ruijie; Yue Zhong; Feng Dandan; Gu Erdan

doi:10.3788/irla201847.0920005

[1] Pimputkar S, Speck J S, Denbaars S P, et al. Prospects for LED lighting[J]. Nature Photonics, 2003, 3(4): 180-182.

[2] Yeh Y H, Sheu J K, Lee M L, et al. Vertical gan-based leds with naturally textured surface formed by patterned sapphire substrate with self-assembled ag nanodots as etching mask[J]. IEEE Transactions on Electron Devices, 2015, 62(9): 2919-2923.

[3] Krames M R, Bhat J, Collins D, et al. High power III nitride emitters for solid state lighting[J]. Physica Status Solidi, 2015, 192(2): 237-245.

[4] Ryu H Y. Modification of internal quantum efficiency and efficiency droop in GaN-based flip-chip light-emitting diodes via the Purcell effect[J]. Optics Express, 2015, 23(19): 1157-1166.

[5] Liu Yang, Guo Zhiyou, Li Jing, et al. Performance enhancement of InGaN-based light-emitting diodes with InGaN/AlInN/InGaN composition-graded barriers[J]. Semiconductor Science & Technology, 2015, 30(12): 125014.

[6] Wei Tongbo, Huo Ziqiang, Zhang Yonghui, et al. Efficiency enhancement of homoepitaxial InGaN/GaN light-emitting diodes on free-standing GaN substrate with double embedded SiO2 photonic crystals[J]. Optics Express, 2014, 22(13): A1093.

[7] Hu Yonglu, Liu Daoliu, Wang Bo, et al. Characteristics of light extraction for surface-microcavity photonic crystal LED[J]. Acta Optica Sinica, 2017, 37(6): 0623004. (in Chinese)

[8] Chang S J, Chang L M, Kuo D S, et al. Gan-based leds with rough surface and selective koh etching[J]. Journal of Display Technology, 2013, 10(1): 27-32.

[9] Lin T H, Wang S J, Tu Y C, et al. Improving the performance of power GaN-based thin-film flip-chip LEDs through a twofold roughened surface[J]. Materials Science in Semiconductor Processing, 2016, 45: 69-75.

[10] Li Zhiquan, Wang Cong, Li Wenchao, et al. Improving LED luminescence properties by using Ag/P-GaN double grating[J]. Optics & Precision Engineering, 2017, 25(5): 1185-1191. (in Chinese)

[11] Zhu Jun, Zhang Haosu, Zhu Zhendong, et al. Surface-plasmon-enhanced GaN-LED based on the multilayered rectangular nano-grating[J]. Optics Communications, 2014, 322(8): 66-72.

[12] Shen Kunching, Liao Chehao, Yu Zanyao, et al. Effects of the intermediate SiO2 layer on polarized output of a light-emitting diode with surface plasmon coupling[J]. Journal of Applied Physics, 2010, 108(11): 11213.

[13] Ma Lijie, Zhao Junfeng. Improving LED luminous efficiency by surface plasmon enhanced waveguide[J]. Infrared and Laser Engineering, 2016, 45(7): 0720003.

[14] Andreas O. Excitation of nonradiative surface plasma waves in silver by the method of frustrated total reflection[J]. Zeitschrift Fur Physik A Hadrons & Nuclei, 1968, 216(4): 398-410.

[15] Li Wenchao, Sha Xiaopeng, Li Zhiquan, et al. Emission enhancement of light-emitting diode by localized surface plasmon induced by Ag inserts in p-GaN and TiO2-Ag grating[J]. Plasmonics, 2016: 1-6.

[16] Palik E D. Handbook of optical constants of solids II[J]. Boston Academic Press, 2014, 39(1): 189.

[17] Purcell E M. Spontaneous emission probabilities at radio frequencies[J]. Physical Review, 1995, 69(11): 839.