• Opto-Electronic Engineering
  • Vol. 32, Issue 10, 89 (2005)
[in Chinese]1, [in Chinese]1, [in Chinese]1, [in Chinese]2, [in Chinese]1, [in Chinese]1, and [in Chinese]1
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. New method of laser induced wet-chemical etching[J]. Opto-Electronic Engineering, 2005, 32(10): 89 Copy Citation Text show less
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    [2] Lee CHEON,Takai MIKIO,Yada TOSHIRO, et al. Laser-induced trench etching of GaAs in aqueous KOH solution[J]. Appl. Phys. A:Solids and Surfaces,1990,51(4):340-343.

    [3] R. J. von GUTFELD,R. T. HODGSON. Laser enhanced etching in KOH [J]. Appl. Phys. Lett,1982,40(4):352-354.

    [4] DasGupta NANDITA,Vangala Naveen KUMAR,Kuna V.S.R. KISHORE,et al. Passive coupling of InGaAs/InP pin detector and single mode fiber using InP bulkmicromachining[J]. Proceedings of SPIE,2000,4075:134-139.

    [5] Khare REENA,Hu Evelyn L. Dopant selective photoelectrochemical etching of GaAs homostructures[J]. Journal of the Electrochemical Society,1991,138 (5):1516-1519.

    [7] R. M. LUM,F. W. OSTERMAYER,JR,et al. Improvements in the modulation amplitude of submicron gratings produced in n-InP by direct photoelectrochemical etching [J]. Appl. Phys. Lett,1985,47(3):269-271.

    [8] M. S. MINSKY,M. WHITE,E. L. HU. Room-temperature photoenhanced wet etching of GaN [J]. Appl. Phys. Lett,1996,68(11):1531-1533.

    [9] Dragan V. PODLESNIK,Heinz H. GILGEN,Richard M. OSGOOD,et al. Waveguiding effects in laser-induced aqueous etching of semiconductors[J]. Appl. Phys. Lett,1986,48(7):496-498.

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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. New method of laser induced wet-chemical etching[J]. Opto-Electronic Engineering, 2005, 32(10): 89
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