• Acta Photonica Sinica
  • Vol. 51, Issue 6, 0623002 (2022)
Quanze LI1、2, Zunkai HUANG1、*, Li TIAN1, Yongxin ZHU1, Hui WANG1、*, and Songlin FENG1
Author Affiliations
  • 1Shanghai Advanced Research Institute Chinese Academy of Sciences,Shanghai 201210,China
  • 2University of Chinese Academy of Sciences,Beijing 100049,China
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    DOI: 10.3788/gzxb20225106.0623002 Cite this Article
    Quanze LI, Zunkai HUANG, Li TIAN, Yongxin ZHU, Hui WANG, Songlin FENG. An Efficient Implementation Method of Arbitrary Gradient Doping and Its Application[J]. Acta Photonica Sinica, 2022, 51(6): 0623002 Copy Citation Text show less
    Schematic of movement process of implanted ions in silicon wafer
    Fig. 1. Schematic of movement process of implanted ions in silicon wafer
    Schematic of ion implantation and diffusion
    Fig. 2. Schematic of ion implantation and diffusion
    One dimensional and two-dimensional simulation results
    Fig. 3. One dimensional and two-dimensional simulation results
    The state of the substrate doping region at different times
    Fig. 4. The state of the substrate doping region at different times
    General flow of FSI single pixel sensor manufacturing
    Fig. 5. General flow of FSI single pixel sensor manufacturing
    Flow of STI manufacturing
    Fig. 6. Flow of STI manufacturing
    Schematic of lithography mask layout design
    Fig. 7. Schematic of lithography mask layout design
    Schematic of pixel three-dimensional structure
    Fig. 8. Schematic of pixel three-dimensional structure
    Comparison of transverse doping distribution of gradient doped and uniform doped photodiodes
    Fig. 9. Comparison of transverse doping distribution of gradient doped and uniform doped photodiodes
    Transverse potential distribution in gradient doped photodiode region
    Fig. 10. Transverse potential distribution in gradient doped photodiode region
    Comparison between grid voltage and readout signal
    Fig. 11. Comparison between grid voltage and readout signal
    Comparison of readout signals with completely depleted collection area
    Fig. 12. Comparison of readout signals with completely depleted collection area
    i12345678910
    xi/μm102030405060708090100
    w/μm0.51.01.52.02.53.03.54.04.55.0
    Table 1. Design scheme of mask opening center and width
    ParameterThis paperRef.[12Ref.[13Ref.[14Ref.[22
    Pixel size /μm5.0×5.05.0×5.05.0×5.010.0×10.04.0×4.0
    Pixel type4T PPD4T PPD4T PPD5T DPSDigital
    Pixel voltage /V3.03.32.51.80.5
    Full well capacity /e-31 20815 60026 000\\
    Dynamic range /dB6069505142
    Random noise /%3.75.53.70.129.3
    Response time /ms5.1\5250\
    Table 2. Comparison of FSI image sensor pixels designed in this paper and references
    Quanze LI, Zunkai HUANG, Li TIAN, Yongxin ZHU, Hui WANG, Songlin FENG. An Efficient Implementation Method of Arbitrary Gradient Doping and Its Application[J]. Acta Photonica Sinica, 2022, 51(6): 0623002
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