[1] Lawson W D, Nielson S, Putley E H, et al. Preparation and properties of HgTe and mixed crystals of HgTe-CdTe ［J］. J. Phys. Chem. Solids. 1959, 9:325-329.
[3] WANG Han, HONG Jin, YUE Fang-Yu, et al. Optical homogeneity analysis of Hg1-xCdxTe epitaxial layers: How to circumvent the influence of impurity absorption bands ［J］. Infrared Physics & Technology. 2017, 82:1-7.
[4] Sun C.H, Zhang P, Zhang T.N, et al. ZnS Thin Films Grown by Atomic Layer Deposition on GaAs and HgCdTe Substrates at Very Low Temperature ［J］. Infrared Physics & Technology. 2017, 85:280-286.
[6] Bensussan P, Tribllet P. 50 years of successful MCT research and production in France ［J］. Proc. of SPIE. 2009, 72982N.
[7] Péré-Lapernea N, Rubaldoa L, Kerlain A, et al. 10 μm pitch design of HgCdTe diode array in Sofradir ［J］. Proc. of SPIE. 2015, 9370.
[8] Reine M. B. History of HgCdTe infrared detectors at BAE Systems ［J］. Proc. of SPIE. 2009, 72982S.
[9] Figgemeier H, Bruder M, Mahlein K. M, et al. Impact of critical processes on HgCdTe diode performance and yield ［J］. Journal of Electronic Materials, 2003,32(7):588-591.
[10] Kinch M. A. 50 years of HgCdTe at Texas Instruments and Beyond ［J］. Proc. of SPIE, 2009, 72982T.
[11] Tennant W. E, Arias J. M. HgCdTe at Teledyne ［J］. Proc. of SPIE, 2009, 72982V.
[12] Bratt P. R, Johnson S. M, Rhiger D. R, et al. Historical perspectives on HgCdTe material and device development at Raytheon Vision Systems ［J］. Proc. of SPIE. 2009, 72982U.
[14] Sheng F F, Yang J R, Sun S W, et al. Influence of Cd-rich Annealing on Defects in Te-rich CdZnTe Materials ［J］. Journal of Electronic Materials. 2014, 43(7):2702-2708.
[15] Sheng F F, Zhou C H, Sun S W, et al. Influences of Te-rich and Cd-rich precipitates of CdZnTe substrates on the surface defects of HgCdTe liquid-phase epitaxy materials ［J］. Journal of Electronic Materials. 2014, 43(5):1397-1402.
