Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum

Yuan Yuan; Jiyuan Zheng; Yaohua Tan; Min Ren; Yiwei Peng; Ann-Kathryn Rockwell; Seth R. Bank; Avik W. Ghosh; Joe C. Campbell

doi:10.1364/PRJ.7.000273

Journals >Photonics Research >Volume 7 >Issue 3 >Page 273 > Article

Photonics Research
Vol. 7, Issue 3, 273 (2019)

Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum

Yuan Yuan¹, Jiyuan Zheng¹, Yaohua Tan¹, Min Ren¹..., Yiwei Peng¹, Ann-Kathryn Rockwell², Seth R. Bank², Avik W. Ghosh¹ and Joe C. Campbell^1,*|Show fewer author(s)

Author Affiliations

¹Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA

²Electrical and Computer Engineering Department, University of Texas at Austin, 1616 Guadalupe St., Austin, Texas 78758, USA

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DOI: 10.1364/PRJ.7.000273 Cite this Article Set citation alerts

Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Min Ren, Yiwei Peng, Ann-Kathryn Rockwell, Seth R. Bank, Avik W. Ghosh, Joe C. Campbell, "Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum," Photonics Res. 7, 273 (2019) Copy Citation Text

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References

[1] Y. Yuan, J. Zheng, Y. Tan, M. Ren, Y. Peng, A.-K. Rockwell, S. R. Bank, A. W. Ghosh, J. C. Campbell. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy. Photon. Res., 6, 794-799(2018).