Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum

Yuan Yuan; Jiyuan Zheng; Yaohua Tan; Min Ren; Yiwei Peng; Ann-Kathryn Rockwell; Seth R. Bank; Avik W. Ghosh; Joe C. Campbell

doi:10.1364/PRJ.7.000273

Journals >Photonics Research >Volume 7 >Issue 3 >Page 273 > Article

Photonics Research
Vol. 7, Issue 3, 273 (2019)

Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum

Yuan Yuan¹, Jiyuan Zheng¹, Yaohua Tan¹, Min Ren¹, Yiwei Peng¹, Ann-Kathryn Rockwell², Seth R. Bank², Avik W. Ghosh¹, and Joe C. Campbell^1、*

Author Affiliations

¹Electrical and Computer Engineering Department, University of Virginia, 351 McCormick Rd., Charlottesville, Virginia 22904, USA

²Electrical and Computer Engineering Department, University of Texas at Austin, 1616 Guadalupe St., Austin, Texas 78758, USA

show less

DOI: 10.1364/PRJ.7.000273 Cite this Article Set citation alerts

Yuan Yuan, Jiyuan Zheng, Yaohua Tan, Min Ren, Yiwei Peng, Ann-Kathryn Rockwell, Seth R. Bank, Avik W. Ghosh, Joe C. Campbell. Temperature dependence of the ionization coefficients of InAlAs and AlGaAs digital alloy: erratum[J]. Photonics Research, 2019, 7(3): 273 Copy Citation Text

EndNote(RIS)

BibTex

Plain Text

show less

Cited By

Article index updated: Feb. 24, 2023

Citation counts are provided from Web of Science. The counts may vary by service, and are reliant on the availability of their data.