[1] Lam Y, Loehr J P, Singh J. Comparison of steady state and transient characteristics of lattice matched and strained InGaAs-AlGaAs (on GaAs) and InGaAs-AlInAs (on InP) quantum well lasers. IEEE Journal of Quantum Electronics, 1992, 28(5): 1248-1260
[2] Suemune I, Coldren L A, Yamanishi M, et al. Extremely wide modulation bandwidth in a low threshold current strained quantum well laser. Applied Physics Letters, 1988, 53(15): 1378-1380
[3] Chan M C Y, Surya C, Wai P K A. The effects of interdiffusion on the subbands in GaxIn1 - xN0.04As0.96/GaAs quantum well for 1.3 and 1.55 μm operation wavelengths. Journal of Applied Physics, 2001, 90(1): 197-201
[4] Muraki K, Fukatsu S, Shiraki Y, et al. Surface segregation of In atoms during molecular beam epitaxy and its influence on the energy levels in InGaAs/GaAs quantum wells. Applied Physics Letters, 1992, 61(5): 557-559
[5] Chattopadhyay K, Aubel J, Sundaram S, et al. Electroreflectance study of effects of indium segregation in molecular-beam-epitaxy-grown InGaAs/GaAs. Journal of Applied Physics, 1997, 81(8): 3601-3606
[6] Yu H, Roberts C, Murray R. Influence of indium segregation on the emission from InGaAs/GaAs quantum wells. Applied Physics Letters, 1995, 66(17): 2253-2255
[7] Martini S, Quivy A A, Tabata A, et al. Reduction of indium segregation in InGaAs/GaAs quantum wells grown by molecular beam epitaxy on vicinal GaAs(001) substrates. Journal of Vacuum Science & Technology B, 2000, 18(4): 1991-1996
[8] Moison J M, Guille C, Houzay F, et al. Surface segregation of third-column atoms in group III-V arsenide compounds: Ternary alloys and heterostructures. Physical Review B, 1989, 40(9): 6149-6162
[9] Iyer S S, Tsang J C, Copel M W, et al. Growth temperature dependence of interfacial abruptness in Si/Ge heteroepitaxy studied by Raman spectroscopy and medium energy ion scattering. Applied Physics Letters, 1989, 54(3): 219-221
[10] Fukatsu S, Fujita K, Yaguchi H, et al. Self-limitation in the surface segregation of Ge atoms during Si molecular beam epitaxial growth. Applied Physics Letters, 1991, 59(17): 2103-2105
[11] Gerard J M, Marzin J Y. Monolayer-scale optical investigation of segregation effects in semiconductor heterostructures. Physical Review B, 1992, 45(11): 6313-6316
[12] Lin Z, Xu F, Weaver J H. Surface segregation at metalndashIIIV-compound-semiconductor interfaces. Physical Review B, 1987, 36(11): 5777-5783
[13] Ohtake A, Ozeki M, Terauchi M, et al. Strain-induced surface segregation in In0.5Ga0.5As/GaAs heteroepitaxy. Applied Physics Letters, 2002, 80(21): 3931-3933
[14] Schowalter M, Rosenauer A, Gerthsen D. Influence of surface segregation on the optical properties of semiconductor quantum wells. Applied Physics Letters, 2006, 88(11): 111906.1-111906.3
[15] Tsang J S, Lee C P, Lee S H, et al. Compositional disordering of InGaAs/GaAs heterostructures by low-temperature-grown GaAs layers. Journal of Applied Physics, 1996, 79(2): 664-670
[16] Gonzalez de la Cruz G. The influence of surface segregation on the optical properties of quantum wells. Journal of Applied Physics, 2004, 96(7): 3752-3755
[17] Rosenauer A, Gerthsen D, van Dyck D, et al. Quantification of segregation and mass transport in InxGa1 - xAs/GaAs Stranski-Krastanow layers. Physical Review B, 2001, 64(24): 245334
[18] Matthews J W, Blakeslee A E. Defects in epitaxial multilayers. Journal of Crystal Growth, 1974, 27: 118-125 Gillin W P. Effect of strain on the interdiffusion of InGaAs/GaAs heterostructures. Journal of Applied Physics, 1999, 85(2): 790-793
[19] Martini S, Quivy A A, Lamas T E, et al. Real-time RHEED investigation of indium segregation in InGaAs layers grown on vicinal GaAs(001) substrates. Physical Review B, 2005, 72(15): 153304.1-153304.4