X type crossing waveguide structures constructed by large single-mode rib SOI (Silicon-on-insulator) waveguide have been fabricated. The SOI structure is formed by SDB (silicon wafer direct bonding) process. When crossing angle of the crossing waveguides is equal to 2°, their crosstakles is below to -20 dB, their radiation losses is below to 0.3 dB, and their propegstion losses of the direct channels are measured to beapptoximately 0.85 dB/cm at a wavelength of 1.3 μm.