Photoluminescence Study of MBE Hg0.68Cd0.32Te Epilayers

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Acta Optica Sinica >Volume 19 >Issue 9 >Page 1284 > Article

Acta Optica Sinica
Vol. 19, Issue 9, 1284 (1999)

Photoluminescence Study of MBE Hg0.68Cd0.32Te Epilayers

[in Chinese]^1、2, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, and [in Chinese]¹

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¹[in Chinese]

²[in Chinese]

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[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Photoluminescence Study of MBE Hg0.68Cd0.32Te Epilayers[J]. Acta Optica Sinica, 1999, 19(9): 1284 Copy Citation Text

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Abstract

By using photoluminescences (PL), the molecular beam epitaxy (MBE) grown Hg1-xCdxTe (x=0.32) epilayers are studied. The PL measurement shows a strong near band edge emission peak with an FWHM of 5 meV and a small broadening energy, E0(4.2 K)=1.3 meV, which indicates the high quanlity was obtained. Comparing the results of as-grow and annealing sample shows that annealing sample has a better crystal quality than the as-grow sample.

Keywords

Hg0.68Cd0.32Te epilayer molecular beam epitaxy photoluminescences

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Photoluminescence Study of MBE Hg0.68Cd0.32Te Epilayers[J]. Acta Optica Sinica, 1999, 19(9): 1284

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