Dielectric, Ferroelectric and Piezoelectric Properties of Pb(In1/2Nb1/2)O3-Pb(Ni1/3Nb2/3)O3-PbTiO3 Ternary Ceramics Near Morphotropic Phase Boundary

Lin GUO; Xianji QIAO; Xiuzhi LI; Xifa LONG; Chao HE

doi:10.15541/jim20200042

Journals >Journal of Inorganic Materials >Volume 35 >Issue 12 >Page 1380 > Article

Journal of Inorganic Materials
Vol. 35, Issue 12, 1380 (2020)

Dielectric, Ferroelectric and Piezoelectric Properties of Pb(In_1/2Nb_1/2)O₃-Pb(Ni_1/3Nb_2/3)O₃-PbTiO₃ Ternary Ceramics Near Morphotropic Phase Boundary

Lin GUO^1、2, Xianji QIAO², Xiuzhi LI², Xifa LONG², and Chao HE^2、*

Author Affiliations

¹College of Chemistry and Materials Science, Fujian Normal University, Fuzhou 350117, China

²Key Laboratory of Optoelectric Materials Chemistry and Physics, Fujian Institute of Research on the Structure of Matter, Chinese Academy of Sciences, Fuzhou 350002, China

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DOI: 10.15541/jim20200042 Cite this Article

Lin GUO, Xianji QIAO, Xiuzhi LI, Xifa LONG, Chao HE. Dielectric, Ferroelectric and Piezoelectric Properties of Pb(In_1/2Nb_1/2)O₃-Pb(Ni_1/3Nb_2/3)O₃-PbTiO₃ Ternary Ceramics Near Morphotropic Phase Boundary[J]. Journal of Inorganic Materials, 2020, 35(12): 1380 Copy Citation Text

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XRD patterns and enlarged patterns of (200)/(002) reflections of PIN-PNN-PT ceramics at room temperature(a) 0.10PIN-(0.90-x)PNN-xPT; (b) 0.30PIN-(0.7-x)PNN-xPT; (c) 0.50PIN-(0.5-x)PNN-xPT

1. XRD patterns and enlarged patterns of (200)/(002) reflections of PIN-PNN-PT ceramics at room temperature(a) 0.10PIN-(0.90-x)PNN-xPT; (b) 0.30PIN-(0.7-x)PNN-xPT; (c) 0.50PIN-(0.5-x)PNN-xPT

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2. MPB region of PIN-PNN-PT ternary system at room temperature

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$SEM micrographs of fracture surface of 0.10PIN-xPNN-yPT ceramics(a) 0.10PIN-0.49PNN-0.41PT; (b) 0.10PIN-0.51PNN-0.39PT; (c) 0.10PIN-0.53PNN-0.37PT; (d) 0.10PIN-0.55PNN-0.35PT$

3. SEM micrographs of fracture surface of 0.10PIN-xPNN-yPT ceramics(a) 0.10PIN-0.49PNN-0.41PT; (b) 0.10PIN-0.51PNN-0.39PT; (c) 0.10PIN-0.53PNN-0.37PT; (d) 0.10PIN-0.55PNN-0.35PT

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4. Temperature dependence of dielectric constant (e΄) and dielectric loss (tanδ) of 0.50PIN-(0.50-x)PNN-xPT ceramics(a) 0.50PIN-0.13PNN-0.37PT; (b) 0.50PIN-0.15PNN-0.35PT; (c) 0.50PIN-0.17PNN-0.33PT; (d) 0.50PIN-0.19PNN-0.31PT

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5. (a) tanδ, (b) T_C and (c) d₃₃ as a function of PT contents for yPIN-(1-x-y)PNN-xPT ceramics

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6. Ferroelectric hysteresis of (a) 0.10PIN-xPNN-yPT, (b) 0.30PIN-xPNN-yPT, and (c) 0.50PIN-xPNN-yPT ceramics

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yPIN-(1-x-y)PNN-xPT		ε′ (@RT)	tanδ (RT)	d₃₃/(pC⋅N^-1)	T_C/℃	P_r/(μC⋅cm^-2)	E_c/(kV⋅cm^-1)
0.10PIN	x=0.35	2326	0.065	332	109	16.5	14.3
	x=0.37	2172	0.054	364	130	17.6	9.1
	x=0.39	1956	0.035	326	162	19.4	18.5
	x=0.41	1853	0.028	317	191	18.9	24.4
0.30PIN	x=0.33	3792	0.057	375	171	23.3	12.4
	x=0.35	3240	0.044	394	180	23.6	15.1
	x=0.37	3206	0.033	417	200	33.5	14.1
	x=0.39	1951	0.026	382	222	22.8	22.7
0.50PIN	x=0.31	1750	0.038	367	222	19.1	14.6
	x=0.33	2024	0.033	391	236	20.1	18.3
	x=0.35	1697	0.030	401	252	23.7	16.4
	x=0.37	2156	0.021	362	258	13.7	23.9