[1] Wang Zhanguo. Research progress of low dimensional semiconductor materials and devices［J］. World Science and Technology Research and Development, 2000, 22(1): 1-8.

[2] Lin Weizhu, Qiu Zhiren, Xu Wencheng. Femtosecond relaxation of excited carriers in AlGaAs/GaAs multiple quantum wells［J］. Acta Optica Sinica, 1992, 12(5): 390-395.

[3] Wei Guohua, Wang Bin, Li Junmei, et al. Temperature dependence of the photoluminescence properties and the research on the mechanism of In0.2Ga0.8As/GaAs single quantum well［J］. Chinese Journal of Luminescence, 2010, 31(5): 619-623.

[4] Wei Quanxiang, Wu Bingpeng, Ren Zhengwei, et al. Photoluminescence study of two layer stacked InAs/GaAs quantum dots［J］. Acta Optica Sinica, 2012, 32(1): 0125001.

[5] Li Xueqian, Qu Yi, Song Xiaowei, et al. Experimental study of GaAlAs/GaAs quantum well structure［J］. Acta Optica Sinica, 1997, 17(2): 146-149.

[6] Wu Dianzhong, Wang Wenxin, Yang Chengliang. InAs quantum dots with InGaAs caplayer infrared detector grown by MBE［J］. Chinese Journal of Luminescence, 2009, 30(2): 209-213.

[7] Dingle R, Wiegmann W, Henry C H. Quantum states of confined carriers in very thin AlxGa1-xAs-GaAs-AlxGa1-x As heterostructures［J］. Physical Review Letters, 1974, 33(14): 827-830.

[8] Dingle R, Gossard A C, Wiegmann W. Direct observation of superlattice formation in a semiconductor heterostructure［J］. Physical Review Letters, 1975, 34(21): 1327-1330.

[9] Weisbuch C, Miller R C, Dingle R, et al. Intrinsic radiative recombination from quantum states in GaAs/AlxGa1-xAs multi-quantum well structures［J］. Solid State Communications, 1981, 37(3): 219-222.

[10] Wood T H, Burrus C A, Miller D A B, et al. High-speed optical modulation with GaAs/GaAlAs quantum wells in a p-i-n diode structure［J］. Applied Physics Letters, 1984, 44(1): 16-18.

[11] Kondo K, Saito J, Igarashi T, et al. MBE as a production technology for HEMT LSIs［J］. Journal of Crystal Growth, 1989, 95(1-4): 309-316.

[12] Sonoda T, Ito M, Kobiki M, et al. Ultra-high throughput of GaAs and (AlGa)As layers grown by MBE with a specially designed MBE system［J］. Journal of Crystal Growth, 1989, 95(1-4): 317-321.

[13] Johnston A H. Radiation damage of electronic and optoelectronic devices in space［C］. 4th International Workshop on Radiation Effects on Semiconductor Devices for Space Application, 2000.

[14] Kawanishi H, Sugimoto Y, Tanaka N, et al. Sub-100 nm patterning of GaAs using in situ electron beam lithography［J］. Japanese Journal of Applied Physics, 1993, 32: 4033-4037.

[15] Manasreh M O, Ballet P, Smathers J B, et al. Proton irradiation effects on the intersubband transition in GaAs/AlGaAs multiple quantum wells with bulk or superlattice barriers［J］. Applied Physics Letters, 1999, 75(4): 525-527.

[16] Aierken A, Guo Q, Huhtio T, et al. Optical properties of electron beam and γ-ray irradiated InGaAs/GaAs quantum well and quantum dot structures［J］. Radiation Physics and Chemistry, 2013, 83: 42-47.

[17] Huang Wanxia, Lin Libin, Zeng Yiping, et al. The effects of proton irradiation on optical properties of GaAs/AlGaAs quantum wells［J］. Chinese Journal of Semiconductors. 1999, 20(11): 957-962.

[18] Che Chi, Liu Qingfeng, Ma Jing, et al. Displacement damage effects on the characteristics of quantum dot lasers［J］. Acta Physica Sinica, 2013, 62(9): 094219.

[19] Ma Jing, Che Chi, Han Qiqi, et al. Displacement damage effect on the characteristics of quantum well laser［J］. Acta Physica Sinica, 2012, 61(21): 214211.

[20] Zhou Yanping, Hao Na, Yang Rui, et al. Electron radiation effect of LED［J］. Infrared and Laser Engineering, 2013, 42(2): 454-458.

[21] Lambkin J D, Dunstan D J, Homewood K P, et al. Thermal quenching of the photoluminescence of InGaAs/GaAs and InGaAs/AlGaAs strained-layer quantum wells［J］. Applied Physics Letters, 1990, 57(19): 1986-1988.

[22] Anderson N G, Laidig W D, Kolbas R M, et al. Optical characterization of pseudomorphic InxGa1-xAs/GaAs single quantum well heterostructures［J］. Journal of Applied Physics, 1986, 60(7): 2361-2367.

[23] Ye Zhicheng, Shu Yongchun, Cao Xue, et al. Strain effect on temperature dependent photoluminescence from InxGa1-xAs/GaAs quantum wells［J］. Chinese Journal of Luminescence, 2011, 32(2): 164-168.

[24] Ryu S W, Kim I, Choe B D, et al. The effect of strain on the interdiffusion in InGaAs/GaAs quantum wells［J］. Applied Physics Letters, 1995, 67(10): 1417-1419.

[25] Zhao Jie, Wang Yongchen. Effects on optical and electrical properties of InGaAs(P)/InP MQW structure by quantum well intermixing［J］. Chinese Journal of Luminescence, 2002, 23(6): 540-548.