[2] Loubriel G M, Zutavern F J, Mar A et al.. Physics and applications of the lock-on effect. Proc.of 18th IEEE Power Modulator Symposium, Hilton Head, SC, 1988. 312～317
[3] Hudgins J L, Bailey D W, Dougal R A et al.. Streamer model for ionization growth in a photoconductive power switch. IEEE Trans. Power Electronics, 1995, 10(5):615～620
[5] Zhao H, Hur J H, Gunderson M A. Avalanche injection model for the lock-on in Ⅲ-Ⅴ power photoconductive switches. J. Appl. Phys., 1993, 73(5):1807～1812
[6] Eizenberg M, Hovel H J. Space-charge-limited current measurements in semi-insulating GaAs. J. Appl. Phys., 1991, 69(4):2256～2263
[7] Horio K, Satoh K. Two-dimensional analysis of substrate-related kink phenomena in GaAs MESFET′s. IEEE Trans. Electron Devices, 1994, 41(12):2256～2261
[8] Sze S M. Physics of Semiconductor Devices. New York:Wiley Press, 1981. 50～51
[9] Horio K, Asada K, Yanai H. Two-dimensional simulation of GaAs MESFET with deep acceptors in semi-insulating substrate. Solid State Electron., 1991, 34(4):335～343
[10] Rambo P W, Lawson W S. Self-consistent, 2D simulations of filament propagation in photoconducting switches. Proc. SPIE,1994, 2343:82～91
