The self-assembled InAs/GaAs quantum dots (QDs) with extremely low density of 8\time10^(6) cm^(-2) are achieved using higher growth temperature and lower InAs coverage by low-pressure metal-organic chemical vapour deposition (MOVCD). As a result of micro-photoluminescence (micro-PL), for extremely low density of 8\time10^(6) cm^(-2) InAs QDs in the micro-PL measurements at 10 K, only one emission peak has been achieved. It is believed that the InAs QDs have a good potential to realize single photon sources.