• Chinese Journal of Quantum Electronics
  • Vol. 17, Issue 6, 562 (2000)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    DOI: Cite this Article
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Simulation of I-V Property of Au Nanoparticle Self-assembly System Using Finite Well Potential[J]. Chinese Journal of Quantum Electronics, 2000, 17(6): 562 Copy Citation Text show less

    Abstract

    In this paper, the hopping rates of electrons in nanoparticle self-assembly system are computed using transfer Hamiltonian based on the finite well potential model of quantum dots. Then the relation between tunneling current and bias voltage is gotten by the solution of the master equation of electron hopping.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Simulation of I-V Property of Au Nanoparticle Self-assembly System Using Finite Well Potential[J]. Chinese Journal of Quantum Electronics, 2000, 17(6): 562
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