• Chinese Journal of Lasers
  • Vol. 26, Issue 9, 811 (1999)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical Thin Films for 980 nm High-power Semiconductor Laser Devices Formed by Electron Cyclotron Resonance Plasma[J]. Chinese Journal of Lasers, 1999, 26(9): 811 Copy Citation Text show less
    References

    [1] Steven Dzioba, R. Rousina. Dielectric thin film deposition by electron cyclotron resonance plasma chemical vapor deposition for optoelectronics. J. Vac. Sci. Technol., 1994, B12(1):433~440

    [2] Y. Manabe, T. Mitsuyu. Silicon nitride thin films prepared by the electron cyclotron resonance plasma chemical vapor deposition method. J. Appl. Phys., 1989, 66(6):2475~2480

    [3] Jinho Ahn., Katsumi Suzuki. Stress-controlled Silicon nitride film with high optical transmittance prepared by an ultrahigh-vacuum electron cyclotron resonance plasma chemical-vapor deposition system. Appl. Phys. Lett., 1994, 64(24):3249~3251

    [4] Takashi Inukai, Ken′ichi Ono. Optical characteristics of amorphous silicon nitride thin films prepared by electron cyclotron resonance plasma chemical vapor deposition. Jpn. J. Appl. Phys., 1994, 33(5A):2593~2598

    [5] A. R. Shimkunas, E. Mauger, L. P. Bourget et al.. Advanced electron cyclotron resonance chemical vapor deposition SiC coatings and X-ray mask membranes. J. Vac. Sci. Technol., 1991, B9(6):3258~3261

    [6] Tan Manqing. All-dielectric optical coatings deposition by ECR plasma CVD, in Congress for GaAs and other chemical compound in 1997, Zhangjiajie: Semiconductor material committee, institute of national color metel, 1997. 310~312

    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical Thin Films for 980 nm High-power Semiconductor Laser Devices Formed by Electron Cyclotron Resonance Plasma[J]. Chinese Journal of Lasers, 1999, 26(9): 811
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