• Chinese Journal of Lasers
  • Vol. 26, Issue 9, 811 (1999)
[in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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  • [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical Thin Films for 980 nm High-power Semiconductor Laser Devices Formed by Electron Cyclotron Resonance Plasma[J]. Chinese Journal of Lasers, 1999, 26(9): 811 Copy Citation Text show less

    Abstract

    This paper introduces the technology of optical thin films formation by electron cyclotron resonance plasma chemical vapor deposition (ECR plasma CVD) for 980 nm high-power semiconductor laser devices. A monitoring control method of optical thin films production is studied and the advantages of the deposition technique and the remarkable characteristics of the films are discussed.
    [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Optical Thin Films for 980 nm High-power Semiconductor Laser Devices Formed by Electron Cyclotron Resonance Plasma[J]. Chinese Journal of Lasers, 1999, 26(9): 811
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