[1] Feng H, Zhang L, Lin W W, et al. Research progress in ZnO single-crystal: Growth, scientific understanding, and device applications [J]. Chin. Sci. Bull., 2014, 59: 1235.
[2] OzgürU, Alivov Y I, Liu C, et al. A comprehensive review of ZnO materials and devices [J]. J. Appl. Phys., 2005, 98: 041301.
[3] Wang X B, Li D M, Zeng F. Microstructure and properties of Cu-doped ZnO films prepared by dc reactive magnetron sputtering [J]. J. Phys. D: Appl. Phys., 2005, 38: 4104.
[4] Yang Y C, Song C, Wang X H. Giant piezoelectric d33 coefficient in ferroelectric vanadium doped ZnO films [J]. Appl. Phys. Lett., 2008, 92: 012907.
[5] Qu X, Wang W, Lv S, et al. Thermoelectric properties and electronic structure of Al-doped ZnO [J]. Solid State Commun., 2011, 151: 332.
[6] Wang V, Ma D, Jia W. Structural and electronic properties of hexagonal ZnO: A hybrid functional study [J]. Solid State Commun., 2012, 152: 2045.
[7] Ohtaki M, Tsubota T, Eguchi K. High temperature thermoelectric properties of (Zn1-xAlx)O [J]. J. Appl. Phys., 1996, 79: 1816.
[8] Zhang F P, Lu Q M, Zhang X, et al. Electrical transport properties of CaMnO3 thermoelectric compound: A theoretical study [J]. J. Phys. Chem. Phys., 2013, 74: 1859.
[9] Zhang F P, Zhang X, Lu Q M, et al. Electronic structure and thermal properties of doped CaMnO3 system [J]. J. Alloys Compds, 2011, 509: 4171.
[10] Payne M C, Teter M P, Allan D C, et al. Iterative minimization techniques for abinitio total-energy calculations-molecular-dynamics and conjugate gradients [J]. Rev. Modern Phys., 1992, 64: 1045.
[11] Rossler U. Energy bands for CSI (Greens-function method) [J]. Bull. Am. Phys. Soc., 1969, 14: 331.
[12] Madelung O. Introduction to Solid State Theory [M]. Berlin, Heidelberg, New York: Springer-Verlag, 1978.
[13] Zhang X, Lu Q M, Zhang F P, et al. Enhanced thermoelectric performance of Mg2Si0.4Sn0.6 solid solutions by in nanostructures and minute Bi-doping [J]. Appl. Phys. Lett., 2013, 103: 063901.