• Journal of Infrared and Millimeter Waves
  • Vol. 23, Issue 6, 469 (2004)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY ON THE PASSIVATION OF Hg1-xCdxTe PHOTOVOLTAIC DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2004, 23(6): 469 Copy Citation Text show less
    References

    [1] Chen M C, List R S, Chandra D, et al. Key performace-limiting defects in P-on-N HgCdTe LPE heterojunction infrared photodiodes[J]. J.Electron.Mater, 1996, 25(8): 1375-1382.

    [2] Wijewarnasuriya P S, Zandian M, Yong D B, et al. Microscopic Defects on MBE Grown LWIR Hg1-xCdxTe Material and their Impact on Device Performance[J]. J.Electron.Mater, 1999, 28(6): 649-654.

    [3] Bhan R K, Koul S K, Basu P K. Analysis of the idealith factor in surface leaky HgCdTe photodiodes for the long-wavelength infrared region[J]. Semiconductor Sci. and Tech., 1997,12: 448-454.

    [4] Wenbin Sang, Ju Jianhua, Shi Weiming, et al. Comparison of physical passivation of Hg1-xCdxTe[J]. J.Ccystal Growth, 2000, 214/215: 265-268.

    [5] Paul F Fewster. X-ray Scattering from Semiconductors[M]. London: Imperial College Press, 2000,243-276.

    [6] Ni WX, Lyytovich K, Alami J, et al. X-ray reciporcal space mapping studies of strain relaxtion in thin SiGe layers(≤100mm) using a low temperature growth step[J]. J.Crystal Growth, 2001, 227/228: 756-760.

    [7] White J K, Antoszewski, Pal R, et al. Passivation effect on reactive-lon-etch-formed n-on-p Junctions in HgCdTe. [J]J.Electron.Mater, 2002, 31(7): 743-748.

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. STUDY ON THE PASSIVATION OF Hg1-xCdxTe PHOTOVOLTAIC DETECTORS[J]. Journal of Infrared and Millimeter Waves, 2004, 23(6): 469
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