• Journal of Inorganic Materials
  • Vol. 38, Issue 2, 148 (2023)
Aimei ZHANG*, Jiajia ZHU, Tiancheng FANG, and Xixi PAN
DOI: 10.15541/jim20220412 Cite this Article
Aimei ZHANG, Jiajia ZHU, Tiancheng FANG, Xixi PAN. Effects of Al3+ Doping on the Structure and Electrical Transport Property of La0.8Sr0.2Mn1-xAlxO3[J]. Journal of Inorganic Materials, 2023, 38(2): 148 Copy Citation Text show less
XRD patterns and crystal structure of La0.8Sr0.2Mn1-xAlxO3 (0≤x≤0.25)
. XRD patterns and crystal structure of La0.8Sr0.2Mn1-xAlxO3 (0≤x≤0.25)
Resistivity-temperature curves of La0.8Sr0.2Mn1-xAlxO3 under the applied magnetic field of 0 and 3 T
. Resistivity-temperature curves of La0.8Sr0.2Mn1-xAlxO3 under the applied magnetic field of 0 and 3 T
Model fittings of the curves of La0.8Sr0.2Mn1-xAlxO3 (0.1≤x≤0.25) in the high temperature region (lnρ~T-0.25) under the applied magnetic field of 0 and 3 T
. Model fittings of the curves of La0.8Sr0.2Mn1-xAlxO3 (0.1≤x≤0.25) in the high temperature region (lnρ~T-0.25) under the applied magnetic field of 0 and 3 T
Magnetoresistance-temperature curves of La0.8Sr0.2Mn1-xAlxO3 (0.1≤x≤0.25)
. Magnetoresistance-temperature curves of La0.8Sr0.2Mn1-xAlxO3 (0.1≤x≤0.25)
xa/nm b/nm c/nm Volume/nm3RwpRpMn-O-Mn/(°)Mn-O/nmtGGrain size/nm
00.55260.55261.33650.353550.15890.1116164.1210.196460.9709342.3
0.050.55210.55211.33570.352620.17540.1259164.1230.196280.9735843.9
0.100.55090.55091.33390.350680.17640.1254164.1270.195920.9762444.2
0.150.55040.55041.33340.349930.16920.1205164.1290.195780.9789245.7
0.200.54920.54921.33190.348010.08580.0591164.1350.195420.9816157.9
0.250.54810.54811.33040.346190.07590.0535164.1400.195080.9843159.2
Table 1. Lattice constants and refined data of La0.8Sr0.2Mn1-xAlxO3 (0≤x≤0.25) obtained by XRD Rietveld refinement
Al contents (Magnetic field)ρ0/(×10-2, Ω·m) ρ2/(×10-7, Ω·m·K-2) ρ4.5/(×10-13, Ω·m·K-4.5) ρe/(×10-2, Ω·m·K-0.5) ρp/(×10-14, Ω·m·K-5) ρs/(×10-2, Ω·m)
x=0.00 (0 T)-1.7943.485-5.435-0.31332.589-1.011
x=0.00 (3 T)-0.37631.012-1.478-0.073270.7181-0.2298
x=0.05 (0 T)-19.4648.02-111.6-3.74756.81-11.5
x=0.05 (3 T)-9.09720.86-42.3-1.69521.06-5.301
Table 2. Fitting results of low temperature metal phase for La0.8Sr0.2Mn1-xAlxO3 (0≤x≤0.05)
Al contents (magnetic field)Temperature region/KθD/K υph/(×1013, Hz) ρα/(×10−5, Ω·m·K-1) Ea/meV R2
x=0.10 (0 T)[259.606, 300]527.24781.100.374102.730.99923
x=0.10 (3 T)[277.554, 300]563.23651.170.81281.640.99623
Table 3. Fitting parameters of small polaron hopping model for La0.8Sr0.2Mn0.9Al0.1O3
Al contents (Magnetic field)Temperature region/KR2T0/(×106, K) ρ0/(×10-6, Ω·m) N(E)/( ×1014, nm-3·meV-1) Rh(75 K)/nm Eh(75 K)/meV
x=0.15 (0 T)[225.64, 300]0.999413.391030.038972.214870.4137794.025
x=0.15 (3 T)[259.65, 300]0.99786.7890.382144.368750.3491479.34
x=0.20 (0 T)[132.31, 300]0.99933.75859275.2817.89110.535565121.702
x=0.20 (3 T)[155.4, 300]0.999112.143914292.1813.83430.465433105.765
x=0.25 (0 T)[50, 300]0.9981412.563670.019272.360730.724161164.558
x=0.25 (3 T)[50, 300]0.996647.917160.352573.746220.645206146.616
Table 4. Fitting parameters of variable range hopping model for La0.8Sr0.2Mn1-xAlxO3 (0.15≤x≤0.25)
Aimei ZHANG, Jiajia ZHU, Tiancheng FANG, Xixi PAN. Effects of Al3+ Doping on the Structure and Electrical Transport Property of La0.8Sr0.2Mn1-xAlxO3[J]. Journal of Inorganic Materials, 2023, 38(2): 148
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