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Photonics Research
Vol. 7, Issue 8, 828 (2019)

Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm

Tiantian Li^1、2, Milos Nedeljkovic¹, Nannicha Hattasan¹, Wei Cao¹, Zhibo Qu¹, Callum G. Littlejohns^1、3, Jordi Soler Penades¹, Lorenzo Mastronardi¹, Vinita Mittal¹, Daniel Benedikovic⁴, David J. Thomson¹, Frederic Y. Gardes¹, Hequan Wu², Zhiping Zhou², and Goran Z. Mashanovich^1、*

Author Affiliations

¹Optoelectronics Research Centre, University of Southampton, Southampton SO17 1BJ, UK

²State Key Laboratory of Advanced Optical Communication Systems and Networks, School of Electronics Engineering and Computer Science, Peking University, Beijing 100871, China

³Silicon Technologies Centre of Excellence, Nanyang Technological University, Singapore 639798, Singapore

⁴Centre de Nanosciences et de Nanotechnologies, CNRS, Univ. Paris-Sud, Université Paris-Saclay, C2N—Palaiseau, 91120 Palaiseau, France

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DOI: 10.1364/PRJ.7.000828 Cite this Article Set citation alerts

Tiantian Li, Milos Nedeljkovic, Nannicha Hattasan, Wei Cao, Zhibo Qu, Callum G. Littlejohns, Jordi Soler Penades, Lorenzo Mastronardi, Vinita Mittal, Daniel Benedikovic, David J. Thomson, Frederic Y. Gardes, Hequan Wu, Zhiping Zhou, Goran Z. Mashanovich. Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm[J]. Photonics Research, 2019, 7(8): 828 Copy Citation Text

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Tiantian Li, Milos Nedeljkovic, Nannicha Hattasan, Wei Cao, Zhibo Qu, Callum G. Littlejohns, Jordi Soler Penades, Lorenzo Mastronardi, Vinita Mittal, Daniel Benedikovic, David J. Thomson, Frederic Y. Gardes, Hequan Wu, Zhiping Zhou, Goran Z. Mashanovich. Ge-on-Si modulators operating at mid-infrared wavelengths up to 8 μm[J]. Photonics Research, 2019, 7(8): 828

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