[1] Lammert R M, Hu W, Oh S W， et al. High brightness semiconductor lasers from 780~1064 nm[C]. Laser Source Technology for Defense and Security III, 2007, Orlando, FL, USA. SPIE 2007,6552: 655212(17).

[2] Pietrzak A, Crump P, Bugge F， '. 1060 nm Multi Quantum Well Diode Lasers With Narrow Vertical Divergence Angle of 8° and High Internal Efficiency[C]. Lasers and ElectroOptics, 2009 and 2009 Conference on Quantum electronics and Laser Science Conference, Baltimore. IEEE, CLEO/QELS, 2009 :12.

[3] Pietrzak, Crump P, Wenzel H， et al. High Power 1060 nm Ridge Waveguide Lasers with LowIndex Quantum Barriers for Narrow Divergence Angle[C]. Lasers and ElectroOptics (CLEO) and Quantum Electronics and Laser Science Conference (QELS), 2010, San Jose, CA. IEEE, OSA / CLEO/QELS, 2010: 12.

[4] Gao Wei, Mastrovito A, Luo KeJian， et al. High power 1060nm InGaAs/GaAs SingleMode Laser Diodes[C]. HighPower Diode Laser Technology and Applications III, 2005, San Jose, CA, USA. SPIE,2005,5711:5865.

[5] Fukunaga T, Wada M ， Hayakawa T. Reliable operation of straincompensated 1.06 μm InGaAs/InGaAsP/GaAs single quantum well lasers[J]. Appl. Phys. Lett.,1996,69:248250.

[6] Hasler K H, Sumpf B, Adamiec P， et al. 5 W DBR Tapered Lasers Emitting at 1060 nm With a Narrow Spectral Linewidth and a Nearly DiffractionLimited Beam Quality, IEEE Photon. Technol. Lett.,2008,20(19):16481650.

[7] Schwertfeger S, Klehr A, Erbert G， et al. Compact hybrid master oscillator power amplifier with 3.1W CW output power at wavelength around 1061nm[J]. IEEE Photon. Technol. Lett.,2004,16(5):12681270.

[8] Prahova P, Moritz I B, Riordan T. High brightness 810 nm long cavity diode lasers with high d/Γratio in asymmetric low confinement epitaxial structure[C]. Proceedings of the 2001 IEEE/LEOS Annual Meeting,2001,Vol.1:135136.

[9] Ryvkin B S, Avrutin E A. Free carrier absorption and active layer heating in large optical cavity high power diode laser[J]. J. Appl. Phys.,2006,100(10):023104023112.

[10] Wade J K, Mawst L J, Botez D， et al. 8.8 W CW Power from BroadWaveguide AlFree ActiveRegion(λ=0.805 μm) Diode Lasers[J]. Electron Lett.1998,34:11001102.

[11] Botez D. Simple Design Rules for SingleLobe Operation of (Evanescently Coupled) IndexGuided PhaseLocked Arrays of Diode Lasers[J]. IEEE J. Quantum Electron.1988,24:20342038.