A 0.2 THz high power doubler multiplier was designed and realized based on six anodes in parallel-series GaAs planar Schottky diodes. The Schottky diode was flip-chiped on the 50 μm thick quartz. The efficiency of the circuit was simulated combined of EM simulator and circuit simulator. The measured efficiency was bigger than 5% over the band of 190 GHz to 225 GHz with the input power of 100 mW. The circuit output power and efficiency were measured under the condition of small and large input power as 100 mW and 300 mW. The peak efficiency was 14% at the frequency of 193 GHz and the maximum output power was 14.5 mW with the input power of 100 mW under the self-biased condition. The measured output power was bigger than 10 mW over the band of 188 GHz to 195 GHz with the input power of 300 mW under the self-biased condition. The peak output power was 35 mW at the frequency of 192.8 GHz and the multiplier efficiency was 11%.