• Microelectronics
  • Vol. 51, Issue 2, 281 (2021)
DAI Yonghong1, TANG Zhengwei2, LIU Xin3, and LI Yuxin2
Author Affiliations
  • 1[in Chinese]
  • 2[in Chinese]
  • 3[in Chinese]
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    DOI: 10.13911/j.cnki.1004-3365.200525 Cite this Article
    DAI Yonghong, TANG Zhengwei, LIU Xin, LI Yuxin. Research and Manufacture of a 3D Vertical Structure Photodetector[J]. Microelectronics, 2021, 51(2): 281 Copy Citation Text show less
    References

    [1] LIU N H, FANG G J, ZENG W. Direct growth of lateral ZnO nanorod UV photodetectors with Schottky contact by a single-step hydrothermal reaction [J]. ACS Appl Mater & Interf, 2010(2): 1973-1979.

    [2] LU X W, SUN L, JIANG P, et al. Progress of photodetectors based on the photothermoelectric effect[J]. Advan Mater, 2019, 31(50): 1902044.

    [5] MANDEL L, WOLF E, SUDARSHAN E C G. Theory of photoelectric detection of light fluctuations [J]. Proceed Phys Soc LONDON, 1964, 84(5393): 435.

    [6] WANG J F, GUDIKSEN M S, DUAN X F. highly polarized photoluminescence and photodetection from single indium phosphide nanowires [J]. Science, 2001, 293(5534): 1455-1457.

    [7] KONG W Y, WU G A, WANG K Y, et al. Graphene-β-Ga2O3 heterojunction for highly sensitive deep UV photodetector application [J]. Advan Mater, 2016, 28(48): 123-128.

    [8] WANG G, ZHANG M, CHEN D, et al. Seamless lateral graphene p-n junctions formed by selective in situ doping for high-performance photodetectors [J]. Nat Commun, 2018, 9(1): 5168.

    DAI Yonghong, TANG Zhengwei, LIU Xin, LI Yuxin. Research and Manufacture of a 3D Vertical Structure Photodetector[J]. Microelectronics, 2021, 51(2): 281
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