• Journal of Infrared and Millimeter Waves
  • Vol. 21, Issue 1, 23 (2002)
[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], and [in Chinese]
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    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. DISLOCATION DENSITY OF MBE GROWN Hg1-xCdxTe ON ZnCdTe SUBSTRATES*[J]. Journal of Infrared and Millimeter Waves, 2002, 21(1): 23 Copy Citation Text show less
    References

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    [2] Hirth J P, Ehrenreich H. Charged dislocation and jogs in HgCdTe and other II-VI compounds. J. Vac. Sci. Technol., 1985, A3(2):367-372

    [3] Johnson S M, Rhiger D R, Rosberg J P, et al. Effect of dislocations on the electrical and optical properties of long-wavelength infrared HgCdTe photovoltaic detectors. J. Vac. Sci. Technol., 1992, B10(4):1499-1506

    [4] He L, Wang S L, Yang J R, et al. MBE in situ high temperature annealing of HgCdTe. J. Cryst. Growth, 1999, 201/202: 524

    [5] He l, Yang J R, Wang S L, et al. A study of MBE growth and thermal annealing of p-type long wavelength HgCdTe. Cryst. Growth, 1997, 175/176: 677

    [6] Everson J W, Ard C K, Sepich J L, et al. Etch pit characterization of CdTe and CdZnTe substrates for use in mercury cadmium telluride epitaxy. J. Electron. Mater., 1995, 24(5):505-510

    [7] Chen J S. Etchant for revealing dislocation in II-IV compound. U.S. Patent, No.4,897,152

    [9] He L, Wu Y, Chen L, et al. Composition control and surface defects of MBE-grown HgCdTe. J.Crystal Growth, 2001,227*/228:677

    [10] Changdra D, Shin H D, Aqariden F, et al. Formation and control of defects during molecular beam epitaxy growth of HgCdTe. J. Electronic Materials, 1998,27: 640

    [11] Edwall D D, Zandian M, Chen A C, et al. Improving material characteristics and reproducibility of MBE HgCdTe. J. Electronic Materials, 1997, 26: 493

    CLP Journals

    [1] FANG Shi-yu, WANG Ya-rong, TIAN Zhi-xin, SHI Ji-chao, FANG Yong-zheng, SUN Chang-hong, YE Zhen-hua, LIU Yu-feng. Research Progress of Surface Passivation of HgxCd1-xTe Films[J]. INFRARED, 2021, 42(9): 1

    [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. DISLOCATION DENSITY OF MBE GROWN Hg1-xCdxTe ON ZnCdTe SUBSTRATES*[J]. Journal of Infrared and Millimeter Waves, 2002, 21(1): 23
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