Aiming at the problem of oversize eigen current of resonant tunneling diode photodetector focal plane array working at near-infrared wavelengths, a method that using p-doped type in double barriers structure (DBS) of resonant tunneling diode photodetector working at near- infrared wavelengths to suppress eigen current is presented. The current-voltage characteristics are simulated by finite element software. Effects of single barrier pdoped, double barriers p-doped，DBS p-doped and concentrations of p-doping on the eigen current suppression are researched. Simulation results show that the peak tunneling current of the detector with p-doped in DBS reduces about 3 orders of magnitude compared with that of the detector with undoped DBS. It is also found that the eigen current reduces with the increasing of the doping concentration of the DBS. The proposed device has been fabricated and tested. The results demonstrate that the eigen current is effectively suppressed when the DBS is doped in p-type.