Examination and Confirmation of the Carrier Concentration in ZnSe:Cl

[in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]; [in Chinese]

Journals >Chinese Journal of Quantum Electronics >Volume 17 >Issue 1 >Page 85 > Article

Chinese Journal of Quantum Electronics
Vol. 17, Issue 1, 85 (2000)

Examination and Confirmation of the Carrier Concentration in ZnSe:Cl

[in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]¹, [in Chinese]², [in Chinese]², [in Chinese]², [in Chinese]², and [in Chinese]²

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¹[in Chinese]

²[in Chinese]

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DOI: Cite this Article

[in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese], [in Chinese]. Examination and Confirmation of the Carrier Concentration in ZnSe:Cl[J]. Chinese Journal of Quantum Electronics, 2000, 17(1): 85 Copy Citation Text

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References

[5] Dahmani R, Salamanca-Riba L, Nguyen N V et al. Determination of the optical constants of ZnSe films by spectroscopic ellisometry. J. Appl. Phys., 1994, 76(1): 514～517

[6] Hougen C A. Model for infrared absorption and transmission of liquid-phase epitaxy HgCdTe. J. Appl. Phys., 1989, 66(8): 3763～3766

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